LIGA mask technology based on silicon process technique and double side alignment is presented. The processing technology is simple.
提出一种基于硅工艺和双面对准技术的LIGA掩模技术，工艺十分简单。
In the design and fabrication of MEMS devices, MEMS fabrication process based on Silicon is a main technology, to which is deeply paid attention by researchers and industries.
在MEMS器件的设计与加工过程中，键合技术是体硅工艺的一项关键技术。
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
这种先进的工艺技术达到最低可能在每硅阻力区，在出色性能。
The characteristics, equipment, process flow, key points of process control, quality standard and new technology of application of silicon core HDPE pipe were presented.
介绍硅芯管的特性、生产设备、工艺流程、关键技术、质量标准及应用新技术。
The Internet we are in the process, China 's enterprises in the application is very important, the core technology is basically derived from Silicon Valley, from the west.
互联网我们的参与过程中，中国的企业在应用方面非常重要，核心的技术基本是来源于硅谷，来源于西方。
The present technology situation of producing clay-bonded silicon brick for zinc retorting is summarized, and the new process is also introduced in detail.
简述竖罐炼锌用粘土结合碳化硅砖的生产技术现状，详细介绍了新的生产工艺。
Silicon Valley sees a profitable future in the humble brick thanks to a low-energy production process that illustrates the greening of the U. S. technology capital.
由于一种低能耗生产工艺的出现，硅谷发现普普通通的砖头在未来将大有利可图，而该工艺将使美国科技之都实现绿化。
The loading structure, testing part and force sensors were all integrated on a single chip by bulk silicon technology and bonding process.
利用微机械体硅工艺及键合技术，把系统中的测试机构、加载机构以及力传感器集成在一个单一的芯片上。
In chapter 3, the process technology of silicon mold by means of photolithography and wet etching was introduced, which is a important process of hot embossing technology.
第三章介绍的是热压工艺中的一个重要工艺环节——硅阳模制作工艺。
The technology will be based on a planar process with enhanced high-K metal gate (HKMG), novel strained silicon, and low-resistance copper ultra-low-K interconnects.
该技术将基于一个具有增强的高- k金属闸（HKMG平面工艺），新型应变硅，低电阻铜超低K互连。
The technology will be based on a planar process with enhanced high-K metal gate (HKMG), novel strained silicon, and low-resistance copper ultra-low-K interconnects.
该技术将基于一个具有增强的高- k金属闸（HKMG平面工艺），新型应变硅，低电阻铜超低K互连。
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