The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon.
而最新的晶体管体积很小，掺杂沟道时只需在硅中置入少量掺杂原子。
Doping of silicon nanowire is one of effective means to manufacture silicon nanowire semi -conductor devices.
掺杂是制备硅纳米线半导体器件的一个有效手段。
The results have shown that the doping profile of the low pressure epitaxy of silane is steeper than those of silane epitaxy and silicon tetrachloride epitaxy at atmosphere pressure.
结果表明，与硅烷常压外延和四氯化硅常压外延相比，硅烷低压外延的杂质分布更为陡峭。
Thus it is very important to investigate the behavior of oxygen and oxygen precipitation in heavily boron-doping Czochralski silicon (CZSi).
因此研究重掺硼硅单晶中氧和氧沉淀行为具有非常重要的意义，是目前硅材料界研究的热点之一。
The method includes doping a silicon layer with a first type of dopant and performing a first implant process to implant dopant of a second type opposite the first type in the silicon layer.
该方法包括用第一类型掺杂剂掺杂硅层并且执 行第一注入工艺以便在硅层中注入与第一类型相反的第二类型的掺 杂剂。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon. Get the number wrong, and things will not work properly.
最新的晶体管尺寸非常小，在其通道中掺杂只要往硅中注入少量杂质原子，如果这个量掌握得不好，晶体管的正常运行就会受到影响。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon. Get the number wrong, and things will not work properly.
最新的晶体管尺寸非常小，在其通道中掺杂只要往硅中注入少量杂质原子，如果这个量掌握得不好，晶体管的正常运行就会受到影响。
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