A possible ionic charge state distributions of He, c, n, o, ne, Mg, si, s and Fe in solar energetic particle events is presented in this paper.
本文发表了在太阳高能粒子事件中，元素氦、碳、氮、氧、氖、镁、硅、硫和铁的离子电荷态的分布。
The study result shows that the Hall coefficient (absolute value) of n-Si samples will decrease with the increase of compressive stress.
研究结果表明，样品的霍尔系数绝对值随着作用于样品压缩应力的增加而减少。
The enhancement of Nb-Si-N films' mechanical properties is relative to the increment of crystal defects.
薄膜力学性能的提高与其晶体缺陷的增加有关。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
These results showed that the formation of diatom resting spores was related not only with N concentration, but also with Si concentration.
这说明硅藻休眠孢子的形成不仅受氮浓度的影响，还与硅浓度有关。
The hardess degradation of Ti-Si-N coatings induced by oxygen impurity and its mechanisms;
系统分析了氧化物杂质对铁氧化物还原动力学的影响及其机理。
The hardess degradation of Ti-Si-N coatings induced by oxygen impurity and its mechanisms;
系统分析了氧化物杂质对铁氧化物还原动力学的影响及其机理。
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