Method for forming a semiconductor structure and structure thereof.
张达 ZHANG DA：形成半导体结构之方法及其结构。
The method and the semiconductor structure provided by the invention can reduce the W loss effect.
利用本发明的方法和半导体结构，能降低W缺失的效应。
The semiconductor structure includes a semiconductor substrate, a trench in the semiconductor substrate.
该半导体结构包括半导体基板和所述半导体基板中的沟槽。
The distance between the discontinuous portions of the discontinuous sub-collector tunes the performance characteristics of the semiconductor structure.
在不连续的副集电极的不连续的部分之间的距离调节了半导体结构的性能特性。
The invention relates to a photoelectrical Angle sensor with three-layer semiconductor structure, which belongs to the field of semiconductor technology.
本发明涉及一种三层结构的半导体光电角度传感器，属于半导体技术领域。
Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate.
本发明公开了一种形成半导体结构的方法，这种半导体结构包括具有与下面的衬底不同的极性的不连续的非平面副集电极。
The model is based on the semiconductor laser rate equations and the structure of the VCSEL chip, and every element in the circuit is represented.
等效电路的提出是基于半导体激光器速率方程以及VCSEL芯片结构，电路中各元件都有严格的物理意义。
And its basic structure is an electroluminescent semiconductor materials.
它的基本结构是一块电致发光的半导体材料。
This paper reports the formation of the semiconductor CO2 thin-film and the structure, sensitivity, stability, temperature characteristic and response property of this sensing film.
报导了半导体薄膜CO2气体敏感膜的制备，敏感膜的结构特性、温度特性、灵敏度及响应特性和稳定度。
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
We briefly summarize the applications of PEEM to areas such as surface structure analysis, surface chemistry, magnetism, and semiconductor device characterization.
简要总结光电子显微术在表面结构分析，表面化学，磁学，以及半导体器件表征等方面的应用。
The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
In this talk, I will first introduce our capability of probing light-matter interactions in nanoscale semiconductor materials, whereby the quantum size and structure anisotropy play an important role.
这次报告，我将首先介绍我们在纳米半导体材料(在这类材料中材料的尺寸和结构的各向异性起重要的作用)中对探究光和物质相互作用的能力。
This thesis introduces the concept, structure and properties of semiconductor ultrafine particle (SUFP), including quantum-size effect, surface effect and volume effect et, al.
介绍了半导体超细粒子的概念、结构及特性，主要是包括量子尺寸效应、体积效应、表面效应；
This paper discusses the advantages of superlattice semiconductor materials (Multiple Quantum Well Structure) in optical switching and optical computing.
本文讨论了超晶格半导体材料(多层量子阱结构)在光开关和光计算中应用的优越性。
This course has a three part group project assignment which covers the (1) physical structure, (2) the phonon spectra, and the (3) band structure of a semiconductor.
本课程含有一个具有三个组成部分的小组设计作业，覆盖半导体的：（1）物理结构，（2）声子谱，以及（3）带结构。
The theory research shows that the laterally tapered structure can improve the polarization sensitivity of semiconductor laser amplifier.
理论研究表明，锥形结构能改善半导体光放大器的偏振灵敏度。
And initial results have been obtained in the field of the application of combining microelectronic test structure with quality control theory to semiconductor technology.
将微电子测试结构与质量管理理论结合起来，运用于半导体技术，取得了初步结果。
Structure and method are provided for semiconductor devices.
为半导体器件提供结构和方法。
The basic structure and the fundamental principle of semiconductor saturable absorption mirrors (SESAM) that are used for passive mode-locking solid-state lasers are introduced.
介绍了半导体可饱和吸收镜(SESAM)的基本结构及使用半导体可饱和吸收镜被动锁模固态激光器的基本原理。
Using the transition matrix method, the relationship between the catastrophic optical damage threshold and the coating structure of semiconductor lasers were analyzed.
采用转换矩阵的处理方法，对大功率半导体激光器腔面光学灾变阈值与膜层结构的关系进行了分析。
Semiconductor workpieces made according to the present invention offer an improved structure for handling thinned wafers in conventional automated equipment.
根据本发明制造的半导体工件提供改进的结构，以便在传统自动设备中操纵减薄的晶片。
Method for reducing metal, multilayer interconnection structure and manufacturing method for the same, and semiconductor device and manufacturing method for the same.
金属还原方法，多层互连结构及制法，半导体器件及制法。
A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise.
本发明提供了与如FINFET或平面CMOS器件的半导体器件集成的反熔断器结构(100)及其制造方法。
A gate structure of the metal oxide semiconductor is etched (510).
将金属氧化物半导体的栅极构造蚀刻(510)。
The invention provides a semiconductor component and a method for manufacturing a metal-insulator-metal capacitor in a Mosaic structure.
本发明提供一半导体元件及制造镶嵌结构中的金属绝缘金属电容的方法。
This paper analyzes the carrier non local transport model of small size semiconductor devices and studies the influences of nonsymmetrical band structure and heterogeneous effect on emphasis.
系统分析了小尺寸半导体器件中的载流子非本地输运模型，重点研究了非均匀能带结构和异质结效应对输运电流密度的影响。
The silicon in semiconductor components has to be mono crystalline: it has to have a very pure crystal form without defects in the crystal structure.
硅在半导体元件要单结晶：它需要有一个非常纯净的晶体形式，如果没有缺陷的晶体结构。
The silicon in semiconductor components has to be mono crystalline: it has to have a very pure crystal form without defects in the crystal structure.
硅在半导体元件要单结晶：它需要有一个非常纯净的晶体形式，如果没有缺陷的晶体结构。
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