Electrochemical deposition is of simple and low cost method, displaying a potential application in the deposition of semiconductor films.
电化学沉积薄膜技术工艺设备简单成本低，在半导体薄膜制备方面有很好的应用前景。
The main attention has been paid on amorphous rare earth- transition metal alloy films for magneto-optical storage and amorphous semiconductor films for phase change optical storage.
我们主要注意磁光型存储的非晶态稀土-过渡金属合金薄膜和相变型光存储的非晶态半导体薄膜两个方面。
The immobility of semiconductor thin films is one of the effective methods to solve this problem, while sol-gel technology can realize the immobility of thin films.
制备半导体膜的固定化是解决这一问题的有效途径之一，而溶胶凝胶技术可以实现薄膜的固定化。
In this paper, the characteristics of the diamond films, the technology, the level and the performance of the diamond films semiconductor devices are introduced.
介绍了金刚石薄膜的性质、当今金刚石薄膜半导体器件的技术、水平和性能。
The characterization of thermoelectric properties of semiconductor nano-films on methods and relative theories are reviewed.
综述了半导体纳米薄膜热电性能表征的方法及相关的技术原理。
The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry.
因此在硅基底上形成金属硅化物薄膜也被广泛应用于半导体工业。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
This kind of tester has a enormous practical prospect in many fields, such as electronic glass, semiconductor, integrated circuit, thin films and technology of nanometer.
这种测试仪在电子玻璃、半导体、集成电路、薄膜和纳米技术等领域都具有很大的应用前景。
Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.
通过使用HVPE的外延横向过生长实现连续的化合物半导体厚膜(15)或晶片的进一步的生长。
Metallic colloidal particles - semiconductor thin films show special electrical, optical and photoelectric properties.
金属微粒-半导体薄膜具有特殊的电学、光学及光电特性。
In contrast to that for LCMO films, the metal-semiconductor transition temperature (TMS) for LCMO/YBCO/LCMO films is enhanced and strongly depends on the YBCO layer thickness.
与LCMO单层膜相比，三层薄膜的金属半导体转变温度（TMS）被提高并且强烈依赖于YBCO层的厚度。
In contrast to that for LCMO films, the metal-semiconductor transition temperature (TMS) for LCMO/YBCO/LCMO films is enhanced and strongly depends on the YBCO layer thickness.
与LCMO单层膜相比，三层薄膜的金属半导体转变温度（TMS）被提高并且强烈依赖于YBCO层的厚度。
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