The results of negative resistance effect and transient characteristics of a SOI structure prove that the program can correctly simulate the main phenomena caused by self heating effect.
对一个SOI结构的负阻效应和瞬态特性的模拟结果表明，该程序能够正确模拟器件发热情况以及自热对器件特性的主要影响。
Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts.
模拟和测量的结果证明DSOI器件与SO I器件相比，具有衬底热阻较低的优点，因而DSOI器件在保持SOI器件电学特性优势的同时消除了SO I器件严重的自热效应。
Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts.
模拟和测量的结果证明DSOI器件与SO I器件相比，具有衬底热阻较低的优点，因而DSOI器件在保持SOI器件电学特性优势的同时消除了SO I器件严重的自热效应。
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