One type is the schottky defect in ionic crystals.
在离子晶体中有一类是斯考特库缺陷。
Schottky gate resonant tunneling transistor (SGRTT) is fabricated.
通过流片，制作出肖特基栅共振隧穿三极管(SGRTT)。
The V30200C offers several advantages over planar Schottky rectifiers.
V30200C具有比平面肖特基整流器更出色的多种优势。
Schottky barrier diodes with different metal on III nitride have been fabricated.
研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。
This method is more exact than Schottky Barrier method by avoiding influence of back conductive current.
此法由于没有反向传导电流的影响，所以，比利用肖特基势垒方法要精确些；
This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature.
这个中心自来水肖特基整流器系列一直很低，高温反向漏优化。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
Other features include integrated Schottky diodes, accurate LED current matching and multiple output capability.
其它功能包括集成肖特基二极管、精确的LED电流匹配以及多输出能力。
Schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 8.0 a.
肖特基势垒整流器。最大重复峰值反向电压50V最大平均正向整流电流8.0 A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 3.0 a.
肖特基势垒整流器。最大重复峰值反向电压20V最大平均正向整流电流3.0 A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 1.0 A.
肖特基势垒整流器。最大重复峰值反向电压40V最大平均正向整流电流1.0 A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 3.0 a.
肖特基势垒整流器。最大重复峰值反向电压30V最大平均正向整流电流3.0 A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 1.0 a.
肖特基势垒整流器。最大重复峰值反向电压30V最大平均正向整流电流1.0 A。
The compression characteristic of Schottky detector diode causes E-field probes highly non-linear over signal strength.
在整个测量范围内，肖特基检波二极管的压缩特性导致电场探头测量结果的非线性。
Schottky barrier rectifier. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 3.0 a.
肖特基势垒整流器。经常性最大峰值反向电压20V最大平均正向整流电流3.0 A。
Schottky barrier rectifier. Maximum recurrent peak reverse voltage 30 V. Maximum average forward rectified current 3.0 a.
肖特基势垒整流器。经常性最大峰值反向电压30V最大平均正向整流电流3.0 A。
Schottky barrier rectifier. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 1.0 a.
肖特基势垒整流器。经常性最大峰值反向电压40V最大平均正向整流电流1.0 A。
Schottky barrier rectifier. Maximum recurrent peak reverse voltage 30 V. Maximum average forward rectified current 1.0 a.
肖特基势垒整流器。经常性最大峰值反向电压30V最大平均正向整流电流1.0 A。
Microwave nW power sensor USES low barrier schottky diode (LBSD) as a component for testing the power of microwave signals.
本文介绍了使用低势垒肖特基二极管(LBSD)作为检测微波信号功率元件的微波毫微瓦功率传感器。
Finally, wire bonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.
最后用正交试验的方法对肖特基器件后部封装中的压焊工艺进行了参数优化设计。
The etched ability of the films and the high temperature stability of the Schottky barrier satisfy the requirements of SAG ICs.
膜的可蚀性及肖特基势垒的热稳定性能够满足自对准栅IC的要求。
On the near surface monocrystalline GaAs layer, a better Schottky contact with a barrier height of 0.7V has also been fabricated.
在近表面单晶层上作成了性能良好的肖特基接触，其势垒高度约为0.7V。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
Schottky barrier rectifier. Max recurrent peak reverse voltage 40v. Max RMS voltage 21v. Max DC blocking voltage 40v. Current 1.0a.
肖特基势垒整流器。最大的经常峰值反向电压40v。最大RMS电压21v。最大直流阻断电压40v。电流1.0A。
Schottky barrier rectifier. Max recurrent peak reverse voltage 30v. Max RMS voltage 21v. Max DC blocking voltage 30v. Current 1.0a.
肖特基势垒整流器。最大的经常峰值反向电压30v。最大RMS电压21v。最大的隔直流电压30v。电流1.0A。
Also, the added schottky diode can be easily realized by schottky contact in the drain of the NMOSFET, which does not add chip area.
且该电路结构中肖特基二级管可在NMOSFET漏极直接制作肖特基金半接触来方便地实现，工艺简明可行又无须增加芯片面积。
If the panel has a very low voltage output (less than 33 cells in series), it is an advantage to employ a Schottky diode in this place.
如果面板上有一个非常低的输出电压(小于33系列中的细胞)，这是一个优势，采用肖特基二极管，在这个地方。
Schottky barrier rectifier. Case negative. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 8.0 A.
肖特基势垒整流器。案例负。经常性最大峰值反向电压50V最大平均正向整流电流8.0 A。
Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin.
使用肖特基二极管d1和D2，而不是普通二极管，为的是减少总线上低状态电压，改进噪声极限。
The experiment results show that the Schottky barrier properties and the surface passivation actions to silicon devices of the films are good.
实验表明该膜有良好的肖特基势垒特性和对硅器件的表面钝化作用。
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