The RF method shortens the ion extraction time, and increases the ion extraction efficiency. It can also control the plasma density by changing the magnetic field.
共振法缩短了离子引出时间，提高了离子引出效率，并且可以通过对外加磁场的调节来控制等离子体密度。
An inductively coupled plasma antenna, which is installed on a center of the dielectric window, transfers radio frequency power from an RF power supply to the interior of the processing chamber.
感应耦合等离子体触角安装在介电窗上以便定位在介电窗的中心上，并且将来自射频电源的射频功率传输到加工室内部。
The developing experiment device of RF discharge plasma processing and measurement is introduced.
介绍了自行研制的高频放电等离子体处理及测试实验装置。
It has been shown that when the RF frequency is less than the ion plasma frequency, the ion flux density will strongly depend on the time.
结果表明，当射频场的频率小于或等于离子等离子体频率时，离子流密度明显地随时间变化。
The polypropylene surface modification is researched using plasma generated by capacitance-coupled RF glow discharge and by high voltage corona discharge.
文本研究了用电容耦合RF辉光放电和高压电晕放电产生的等离子体对聚丙烯材料表面改性。
When the external RF frequency is much bigger than ion plasma frequency, ions answer average field.
当外加射频频率远大于离子等离子体频率，离子响应平均场，离子的密度分布几乎不随时间变化；
From plasma wave equations and plasma kinetic equation, we analytically discussed the characteristic of current in an inductive coupled RF plasma and their damping mechanism.
从等离子体波动方程和动力学方程出发，利用解析方法，讨论电感耦合rf放电等离子体的电流特性和衰减机制。
The characteristic of spatial distribution of plasma ion density in reaction chamber were diagnosed by a Langmuir double probe, and the effect of Ar pressure and RF power were also investigated.
利用朗缪尔静电双探针诊断了蒸发镀膜装置反应室内等离子体密度及分析其分布规律，并分析了气压和功率对等离子体分布的影响。
Selfnegative bias on insulate substrate surface of rf glow discharge plasma reactors is studied theoretically. The mathematical analysis has been obtained by equivalent circuit method.
讨论了高频辉光放电等离子体系统中绝缘衬底表面的自负偏压问题，用等效电路方法给出了自负偏压的数学解析。
An apparatus subjects water to waves from an RF plasma.
一种使水经受RF等离子体的波的装置。
Plasma in radio frequency (rf) glow discharge is widely used in the preparation of semiconductor film materials and microelectronic industry.
射频辉光放电等离子体在微电子及半导体薄膜材料生长等方面有着广泛的应用。
Firstly, it was contrastively studied that the nanometer carbon black was oxidized by two kind of oxygen plasma: radio frequency discharge (RF) and dielectric barrier discharge (DBD).
本文首先对比研究了两种以氧气作为放电气体的等离子体：电感式射频辉光等离子体(RF)和介质阻挡放电等离子体(DBD)氧化纳米炭黑的工艺。
The PTFE films were treated by RF plasma to achieve their surface chemical modification and improve their wettability.
通过射频等离子体对聚四氟乙烯（PTFE）表面的作用，实现了PTFE材料表面的化学改性和其润湿性的提高。
Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias.
采用四极质谱仪测量了试验参数对高压脉冲增强射频磁控溅射ptfe靶等离子体气氛的影响规律。
The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法，控制基片电极的射频自偏压。
Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.
因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。
The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.
结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。
The plasma can be 4 generated by hot-cathode discharge or RF discharge of gas. In addition, the device has four metal plasma sources, two magnetron sputtering targets, cold and hot target supports.
真空室内的气体等离子体可由热灯丝或射频放电产生，4另外还配置了4个金属等离子体源、两套磁控溅射靶和冷却靶台。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
应用推荐