The Front/Reverse switching mechanism was placed on the driving shaft, while the acceleration clutch was placed on the driven shaft.
前/后机械开关安装在驱动轴上，同时加速离合器安装在从动轴上。
Model Driven Reverse Engineering (MDRE) is about switching from the heterogeneous world of implementation technologies to the homogeneous world of models.
模型驱动反向工程(MDRE)正在将实现技术的异质世界转变为模型的同质世界。
Using the technology of Pt diffusion to produce diodes can shorten the reverse recovery time and increase the velocity of switching.
采用扩铂工艺制造二极管能够有效地减小开关二极管的反向恢复时间，提高其开关速度。
Our work mainly focus on the improvements of reverse recovery charge and gate charge which impact much on high speed switching and high efficiency performance of a VDMOSFET.
本项目主要针对影响器件开关速率和高效性能的反向恢复电荷、栅电荷进行优化和改进。
Surface mount fast switching rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 1.0 a.
表面贴装快速开关整流器。最大反向重复峰值电压200五，最大平均正向电流1.0A。
Fast switching plastic rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.0 a.
快速开关，塑料整流器。最大的经常峰值反向电压为1000V最大平均正向整流电流1.0 A。
Ultrafast switching rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 10.0 a.
超快开关整流器。最大的经常峰值反向电压为100V最大平均正向整流电流10.0 A。
A new drive circuit for IGBT is designed. It features high switching frequency, high driving power, simple-structure and reverse-turn-off.
论文中还设计了一种新型的IGBT驱动电路，它具有开关频率高、驱动功率大、结构简单且具有负压关断的特点。
A new drive circuit for IGBT is designed. It features high switching frequency, high driving power, simple-structure and reverse-turn-off.
论文中还设计了一种新型的IGBT驱动电路，它具有开关频率高、驱动功率大、结构简单且具有负压关断的特点。
应用推荐