Our results show that the lateral coupling between the quantum dots mainly determine the transport properties of the quantum dot devices under small biases.

实验结果表明：量子点的横向耦合控制了量子点器件在小偏压下的电输运特性。

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There is currently a major ongoing research effort about Silicon-based quantum dot devices because of their unique properties and compatible with mature Si integrated circuit.

硅基量子点器件由于其独特的性能以及和硅集成电路相容的特点成为研究的重点。

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There is currently a major ongoing research effort about Silicon-based quantum dot devices because of their unique properties and compatible with mature Si integrated circuit.

硅基量子点器件由于其独特的性能以及和硅集成电路相容的特点成为研究的重点。

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