Using the optimization principles, the structure of quasi-symmetric coupled quantum-well is optimized.
以准对称耦合量子阱为蓝本，利用此优化原则，对其结构进行优化。
We design several different aperiodic photonic quantum-well (APQW) structures to achieve the filter function in preassigned wave length range.
本文的主要内容是设计几个不同的非周期量子阱来达到预设波段的滤波器功能。
The numerical results shown that it is important to describe the coupling between the narrow quantum-well and the impurity potential correctly.
计算所得数值结果表明正确考虑窄量子阱与杂质势间的耦合作用是极为重要的。
Slow and fast light in quantum-well (QW) and quantum-dot (QD) semiconductor optical amplifiers (SOAs) using nonlinear quantum optical effects are presented.
利用非线性量子光学效应在量子阱(QW)、量子点(QD)半导体光放大器(SOA)中得到了慢光和快光。
There is significant current interest in the exitonic properties and complicated exitonic properties in semiconductor quantum-well wires because of their role in optoelectronic applications.
由于半导体量子阱线中激子和复杂激子的特性在光学器件中有着重要的作用。
The understanding of the temperature dependence of carrier dynamics in an asymmetric double-quantum-well is essentially important for the realization of room temperature efficient photonic devices.
非对称双量子阱中载流子动力学过程的温度依赖性研究，对于实现室温下高效的量子阱光电器件有着非常重要的意义。
The additional upper state is created by a first quantum well adjacent to the injection barrier.
新增高能态是通过注入式势垒旁第一个量子阱来创建的。
The transfer matrix and transmission coefficient through a parabolic quantum well are obtained by solving schrodinger equation .
文中通过求解薛定谔方程得到抛物形量子阱的变换矩阵与透射系数。
The dual polarization dual wavelength lasers with active layer of mixed strained layer quantum well are reported in this paper.
本文报道了以混合应变量子阱结构为有源区的激光器。
Currently quantum well VCSEL (Vertical Cavity Surface Emitting Laser) is one of the most active research problems in the field of optoelectronics.
半导体垂直腔面发射量子阱激光器是当前光电子学领域最活跃的研究课题之一。
Finally, the effect of the structure on resonant tunneling through a parabolic quantum well is studied.
最后，讨论了结构变化对抛物形量子阱的共振隧穿的影响。
The numerical simulation results show the quantum limit of the quantum well width, beyond which will observe the resonant tunneling phenomena.
数值模拟结果给出这类电子器件的量子极限——可观察到共振隧穿现象的量子阱宽度的限度。
This paper presents a new algorithm for fast and accurate analysis of stripe Multiple Quantum Well (MQW) waveguides.
本文提出了一种快速和精确分析多量子阱(MQW)条形光波导的新算法。
The transmission spectrum of multiple quantum well structure with thickness-modulated dual-period was studied by means of transfer matrix method.
采用传输矩阵方法，研究了一维双周期厚度调制的多量子阱的透射谱。
A simple equivalent circuit model of quantum well laser (QW LD) which is derived by QW rate equations and is accomplished in the circuit simulation program SPICE.
给出一个新的量子阱激光器等效电路模型，由量子阱激光器单模速率方程推导得到并在电路模拟程序SPICE中完成。
The polarization eigcnfrequencies of symmetric and unsymmetric quantum well are given.
以及对称和非对称量子阱中面声子的色散曲线。
Achieving the energy level position in quantum Wells of quantum well infrared photodetectors (QWIPs) is the base of designing QWIP other parameters.
量子阱中能级位置的确定是获得量子阱红外探测器其它设计参数的基础。
The polarization dependent optical confinement factor of waveguide structure with mixed strained layer multi quantum well has been discussed in this paper.
本文从理论上对混合应变量子阱结构(既有张应变量子阱又有压应变量子阱)的光学限制因子进行了讨论。
It is indicated that the laser structures with many quantum Wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.
结果表明，当激光器包含多个量子阱时，量子阱内部的载流子密度的不均匀性会损害激光器的性能。
This paper discusses the advantages of superlattice semiconductor materials (Multiple Quantum Well Structure) in optical switching and optical computing.
本文讨论了超晶格半导体材料(多层量子阱结构)在光开关和光计算中应用的优越性。
Electric field applied perpendicularly to the layer of quantum wells can change the optical properties(abstraction, reflection and photoluminescence)of semiconductor quantum well structures.
而在垂直于量子阱平面的方向外加电场可以显著的改变半导体量子阱结构的光学性质（如吸收、反射、光致发光等）。
The energy equilibrium model—The stability theorem on the strained quantum well structure materials have been introduced in the paper.
介绍应变量子阱材料的稳定性理论——能量平衡模型；
The numerical results show that the interactions of the interface phonon and an electron in quantum well are not ignorable.
数值计算结果表明，量子阱中界面声子与电子的相互作用是不可忽略的。
Superlattice and quantum well materials of semiconductor are new-style synthetic materials made in modern film growth techniques.
半导体超晶格和量子阱材料是用现代薄膜生长技术制成的一种新型的人造材料。
This paper presents a simulative method to solve the frequency response of single quantum well laser diode under small signal modulation.
文中运用三层速率模型，对小信号调制下单量子阱激光器的频率响应进行模拟分析。
We have analyzed the single layer material, quantum well material and material comprise of superlattice by using kinematics and dynamics in a comparative way.
对单外延层结构材料、量子阱结构材料、含超晶格结构材料等，分别应用动力学理论和运动学理论作了对比分析。
The differences in the structures and properties of multiple quantum well between different areas on a wafer were achieved using selective partial disordering.
利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异。
The differences in the structures and properties of multiple quantum well between different areas on a wafer were achieved using selective partial disordering.
利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异。
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