The invention also provides a method for preparing isocyanate by adopting the dynamic hole jet reactor.
本发明还提供了采用该反应器制备异氰酸酯的方法。
The present invention is spraying pyrolysis process of preparing nitrogen doped hole type zinc oxide film material, and belongs to the field of semiconductor material.
本发明涉及掺氮空穴型氧化锌薄膜材料的喷雾热解制备方法，属于半导体材料领域。
The present invention is spraying pyrolysis process of preparing nitrogen doped hole type zinc oxide film material, and belongs to the field of semiconductor material.
本发明涉及掺氮空穴型氧化锌薄膜材料的喷雾热解制备方法，属于半导体材料领域。
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