The characteristic of spatial distribution of plasma ion density in reaction chamber were diagnosed by a Langmuir double probe, and the effect of Ar pressure and RF power were also investigated.
利用朗缪尔静电双探针诊断了蒸发镀膜装置反应室内等离子体密度及分析其分布规律，并分析了气压和功率对等离子体分布的影响。
The influence of chamber pressure, gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched.
对二氧化硅反应离子刻蚀中反应室压力，刻蚀气体流量和射频功率等因素对刻蚀速率和刻蚀均匀性的影响进行了研究。
The influence of chamber pressure, gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched.
对二氧化硅反应离子刻蚀中反应室压力，刻蚀气体流量和射频功率等因素对刻蚀速率和刻蚀均匀性的影响进行了研究。
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