The dependence of grain boundary on conductivity in NTC polycrystalline oxide semiconductor was discussed.
主要讨论NTC多晶氧化物半导体中晶界对电导的影响。
The invention discloses a technology for the directional solidification growth of polycrystalline silicon ingot, belonging to the preparation of semiconductor material silicon crystal.
一种定向凝固生长多晶硅锭工艺，本发明属于半导体材料硅晶体的制备。
The invention discloses a technology for the directional solidification growth of polycrystalline silicon ingot, belonging to the preparation of semiconductor material silicon crystal.
一种定向凝固生长多晶硅锭工艺，本发明属于半导体材料硅晶体的制备。
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