The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N2O/NH3 plasma.

采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。

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The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N2O/NH3 plasma.

采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。

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