The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices.
器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。
The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices.
器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。
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