The device, reported in the journal Science, uses a standard parabolic mirror to focus the sun's rays into a reaction chamber where the cerium oxide catalyst breaks down water and carbon dioxide.
这种在《科学》杂志里所报道的装置使用一个标准的抛物柱面镜把阳光搜集进一个反应室。在这个反应室里，铈氧化物催化剂可以分解水和二氧化碳。
A related layer is the field oxide, which provides isolation from other device structures.
一个相关层是场氧化层，使其与其它器件结构分离。
The invention relates to a method and a device for preparing nanometer oxide powders without agglomeration.
本发明涉及一种无团聚纳米氧化物粉体的制备方法及装置。
The method and device of the invention can prepare and obtain the nanometer oxide powders without hard agglomeration.
本发明的方法和装置，能制备得到无硬团聚的纳米氧化物粉体。
Burn-out of a microwave power device due to the poor bonding between beryllium oxide and base metal sink was investigated using Sound Scanning technique.
利用声学扫描检测技术，提示了热烧毁的微波功率器件氧化铍陶瓷基片与底座金属散热片的焊接不良现象；
A positive feedback hot-carrier degradation caused by positive fixed oxide charges increases the electrical field at the drain edge, which degrades the device characteristics seriously.
由于栅氧化层中的固定正电荷引起正反馈的热载流子退化增强了漏端电场，使得器件特性严重退化。
As the detecting material of uncooled infrared detectors, vanadium oxide (VOX) thin films need high temperature coefficient of resistance (TCR) and suitable film resistance for using of the device.
氧化钒薄膜作为非制冷红外探测器的热敏材料，要求具有高的电阻温度系数(TCR)与合适的电阻值，以满足器件的应用。
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。
Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.
本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。
Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor.
或者，本发明的另一个目的在于提供一种使用该氧化物半导体的半导体装置。
The invention also discloses a device for detecting whether etch holes appear on the aluminum anode oxide diaphragm or not.
本发明还公开了一种检测铝阳极氧化皮膜出现疮孔的装置。
New process flow of the tetrapod-like zinc oxide whisker (T-ZnOw) is investigated and expert device is designed in this paper.
提出了新的四针状氧化锌晶须的生产工艺及流程，设计了专门的研究装置。
The electronic device is provided with a semiconductor layer composed of an oxide semiconductor material and an electrode arranged on the semiconductor layer.
电子装置具有包含氧化物半导体材料的半导体层，和设置在上述半导体层上的电极。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
Fuel cell is an electrochemical power generation device, which converts the chemical energy stored in the fuel and oxide into the electrical energy based on the electrochemical principle.
燃料电池是一种电化学的发电装置，该装置将储存在燃料和氧化剂中的化学能，按电化学原理转化为电能。
This invention relates to a preparation method for zinc oxide whisker and its device, belonging to the technical field of ceramic material.
本发明涉及一种氧化锌晶须的制备方法及其装置，属陶瓷材料技术领域。
As so far, there are tow kinds of image sensors: Charge Couple Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS).
作为到目前为止，有拖曳种类图象传感器：充电夫妇设备(CCD)和互补金属氧化物半导体(CMOS)。
As so far, there are tow kinds of image sensors: Charge Couple Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS).
作为到目前为止，有拖曳种类图象传感器：充电夫妇设备(CCD)和互补金属氧化物半导体(CMOS)。
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