Through a CMP process, portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.
利用一化学机械研磨制程，移除该氧化 物层的部分区域，以使该填满沟槽的氧化物层与该第一多晶硅层大体上齐平。
Through a CMP process, portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.
利用一化学机械研磨制程，移除该氧化 物层的部分区域，以使该填满沟槽的氧化物层与该第一多晶硅层大体上齐平。
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