The 2048-element CCPD to be butted USES three-phase three-level polysilicon overlapping gate buried channel structure.
用于拼接的2048位CCPD是采用埋沟三相三层多晶硅交迭栅埋沟结构。
The 2048-element CCPD to be butted USES three-phase three-level polysilicon overlapping gate buried channel structure.
用于拼接的2048位CCPD是采用埋沟三相三层多晶硅交迭栅埋沟结构。
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