A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。
Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.
在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
The master equation of the single electron triple barrier tunnel junction(TBTJ) model is developed based on the orthodox theory.
在正统理论的基础上 ，提出了单电子三势垒隧穿结模型的主方程 ，并用线性方程组解法求出了其稳态解 。
In the paper, a single-charge tunneling simulator, the master equation simulator of two dimensional quantum dot array using Orthodox theory and master equation method is introduced.
介绍了一种利用正统理论与主方程方法模拟二维量子点阵列的程序。
Firstly, we introduce the background of single-electron device the single-electron basic phenomenon, the orthodox theory.
本论文首先介绍了单电子器件的出现背景，介绍了单电子学的正统理论。
Firstly, we introduce the background of single-electron device the single-electron basic phenomenon, the orthodox theory.
本论文首先介绍了单电子器件的出现背景，介绍了单电子学的正统理论。
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