Embodiments relate to a nonvolatile memory device and a method for manufacturing the same.
本发明实施例涉及一种非易失性存储器件及其制造方法。
In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.
在非易失性存储装置中，可以通过将擦除电压施加到位线或共源线来从存储晶体管擦除数据。
Nonvolatile memory device and method of operating the same are provided. Provided is a method of reliably operating a highly-integrated nonvolatile memory device.
本发明提供一种非易失性存储装置及其操作方法，所述操作方法为可靠地操作可高度集成的非易失性存储装置的方法。
The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line.
所述非易失性存储装置可以包括在位线和共源线之间的串选择晶体管、多个存储晶体管和地选择晶体管。
The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line.
所述非易失性存储装置可以包括在位线和共源线之间的串选择晶体管、多个存储晶体管和地选择晶体管。
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