An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer.
在该氮化硅层和碳化硅层表面之间可以有氧化物。
An aluminium nitride layer proves to be much more homogeneous and its sensitivity, in the 602 to 720 GHz range, is also much improved.
在602 ~ 720ghz频率范围内，氮化铝具有更好的均匀性、更高的灵敏度和良好的性能。
The invention provides a resistivity switching metal oxide or nitride layer capable of reaching at least two stable resistivity states.
本发明提供一种可达到至少两个稳定的电阻率状态的电阻率切换金属氧化物或氮化物层。
It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD.
它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。
The principal mechanism of formation of silicon nitride layer on iron surface is described, and variety of production processes and influence factors are reviewed.
综述了钢铁表面形成氮化硅薄膜的基本过程，各种制备方法、特点及影响因素。
The invention discloses an etching stopping layer comprising a nitrogenous silicon carbide layer formed on a substrate and a silicon nitride layer formed on the silicon carbide layer.
本发明公开了一种刻蚀停止层，包括在衬底上形成的含氮的碳化硅 层，以及位于所述碳化硅层之上的氮化硅层。
Each chip is provided with conformal doped silicon glass layers which are covered on the silicon nitride layer and are covered on the gate structure and which have predetermined thickness.
每个所述芯片具有覆盖在所述氮化硅层和所述栅极结构上的具有预定厚度的共形的掺杂硅玻璃层。
The nitride layer was formed on the surface of ductile cast iron by gas multi-element penetration, and the phase structure and section appearance of nitride layer were analyzed by the XRD and SEM.
球墨铸铁经过气体多元共渗后可在其表面形成氮化层，通过X射线衍射和扫描电镜对渗层的相结构与形貌进行分析。
Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.
左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。
A first nitride etch stop layer is deposited over the substrate.
一第一氮化物蚀刻终止层沉积于该衬底上。
The results show that the compound layer is composed of titanium sulfide, titanium nitride, interlayer and substrate.
结果表明：复合渗层由钛的硫化物、钛的氮化物、过渡层及基体组成。
The rapidly solidified in-situ wear resistant composite materials reinforced by hard titanium nitride were successfully fabricated in the laser modified surface layer.
在激光表面改性层中成功地制得了以高硬度氮化钛为增强相的新型快速凝固“原位”耐磨复合材料。
A second nitride etch stop layer is deposited over the first nitride etch stop layer.
一第二氮化物蚀刻终止层沉积于该第一氮化物蚀刻终止层上。
Double-layer transparent films, silicon nitride and silicon dioxide can be used as antireflection coating on silicon PIN photodetector.
氮化硅、二氧化硅双层透明膜可用作硅PIN光电探测器抗反射膜。
Moreover, re elements can fine the structure of the layer, improve precipitating carbonous chromium nitride formed and increase the hardness of the layer.
而且稀土元素显著地细化渗层组织，促进氮碳化合物弥散细小析出，提高渗层硬度。
The multilayer film is formed through two processes of nitride deposition and metal-layer deposition which are carried out repeatedly and alternatively.
该多层膜是由沉积氮化物和沉积金属层两个过程重复交替进行而成。
The experiment shows that the compound layer with nitride and oxide is obtained in surface of 45 steel by the combined treat of ion nitrocarburizing and oxidizing. The compou…
结果表明，45钢经离子氮碳氧复合渗处理后，表层可获得化合物和氧化物的复合渗层，明显提高45钢的耐磨性能。
The titanium nitride film layer and the glass have strong combing ability and the light penetrating ability and the color of beautiful shallow blue.
氮化钛膜层与玻璃之间具有较强的结合能力和透光能力，同时具有漂亮的浅兰色。
We have discovered that it is possible to tune the stress of a single-layer silicon nitride film by manipulating certain film deposition parameters.
我们已经发现，可以通过操作某些膜沉积参数来调节单层氮化硅膜的应力。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。
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