The new research of MOSFET-gate dielectric was summarized.
本文综述了MOSFET栅介质的最新研究状况。
The fundamental principles of the bulk-driven MOSFET and mixer are discussed.
讨论分析了混频器和衬底驱动MOSFET的工作原理。
If reverse protection is not needed, only a single external MOSFET is required.
如果反向保护不需要，那么仅需要单个外部MOSFET。
Single flyback converter circuit, as well as the PWM signal, is used to control the MOSFET.
使用单端反激变换器电路，用PWM信号控制开关管MOSFET。
The experiment results are given. The losses on the synchronous MOSFET are analyzed in detail.
用实验验证了该控制方法，并详细分析了同步整流管的损耗。
Skilled with MOSFET device engineering, especially in its reliability and performance aspects.
具有MOSFET元件工程技能，其中，尤其著重于可靠度及高效能方面。
This method has the same device area and is completely compatible with the bulk MOSFET process.
这种抑制浮体效应的方法不增加器件面积，而且与体硅MOSFET工艺完全兼容。
The second is electronic devices of high-performance power semiconductor such as MOSFET and IGBT.
二是正在快速更新的高性能功率半导体MOSFET和IGBT等电力电子器件；
The parameters for the MOSFET DC model are extracted by the L-Malgorithm in the optimization method.
本文采用最优化方法中的L - M方法，对MOSFET直流模型参数进行优化提取。
The wire feeder timing system consists of MOSFET switch control circuit, PWM circuit and control circuit.
送丝调速系统由功率MOSFET开关控制电路、脉宽调制电路及控制电路构成。
The calculation and drafting method in the safe operation range of POwer MOSFET are studied in this paper.
本文研究了功率MOSFET管的安全工作区的计算及绘制方法。
In this paper, the switching process of power MOSFET is introduced based on its gate-charge characteristics.
本文先介绍了基于功率MOSFET的栅极电荷特性的开关过程；
The paper analyzes the phase-lock technique of serial resonant inverter with power MOSFET as switching device.
研究了以功率MOSFET为开关管的串联谐振逆变器的频率跟踪问题。
In addition, by analyzing the inside structure of MOSFET, three methods to quicken the pulse front edge are presented.
另外本文通过分析MOSFET的内部结构，从MOSFET驱动原理上寻求了几种加快输出脉冲前沿的方法。
A modified algorithm for evaluation of the threshold voltage in MOSFET with non-uniformly doped substrate is presented.
提出一种改进了的计算衬底非均匀掺杂mos器件开启电压的算法。
Its dual UVLO feature protects the power MOSFET from damage in the event that the gate-drive or supply voltage is too low.
器件的双uvlo功能保护功率MOSFET不会因栅极驱动或电源电压过低而损坏。
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed.
提出了一种提高高压垂直双扩散MOS场效应晶体管(VDMOSFET)的体二级管恢复速度的新方法。
The solid state switch device uses power MOSFET as soft switch, so, the spark doesn't appear when the circuit turn on or turn off.
固态开关部件采用电力MOSFET做软开关，使得电路通断时，不会出现打火花的现象。
A quasi-two dimentional analytical model of threshold voltage for non-uniform doped short channel MOSFET is presented in this paper.
本文提出一个非均匀掺杂、短沟道MOSFET阈电压的准二维解析模型。
The system also includes a switch control circuit to switch the MOSFET switches in synchronization with the three-phase current flow.
本系统还包括开关控制电路，用于与三相电流同步切换MOSFET开关。
The high frequency parasitic effect of MOSFET is emphasis on, included gate resistance, substrate resistance, and parasitic capacitance.
重点讨论MOSFET的高频寄生参数，包括栅电阻、衬底电阻、寄生电容等。
The threshold voltage and the peak of proportional difference for MOSFET devices will change after the uniform high electric field stress.
在均匀的高电场应力下，MOSFET器件的阈值电压和输出特性的比例差分峰值会有所改变。
This thesis pays more attention to the HF MOSFET drive circuit and characteristics of balancing parallel MOSFETs' currents in dynamic mode.
本文主要研究高频功率MOSFET的驱动电路和在动态开关模式下的并联均流特性。
The device size can be greatly shrunk with effectively suppressing short channel effect and parasitic bipolar effect in conventional MOSFET.
这种结构器件能有效降低困扰常规MOSFET的短沟效应和寄生的双极效应，能大幅度减小器件尺寸。
This thesis pays more attention to the drive circuit of high frequency power MOSFET, power regulation circuit and frequency-tracing circuit.
本文主要研究高频功率MOSFET的驱动电路、频率跟踪电路以及功率调节电路。
This paper presents a new fully integrated MOSFET-C current mode sixth-order low-pass filter with precise continuous time balanced structure.
本文提出了以运算放大器为基础的一种新型电流模式MOSFET-C全集成精确连续时间平衡结构六阶低通滤波器电路。
Therefore, under the circumstances, several requirements and measures are proposed for high-speed MOSFET driver circuit and reducing MOSFET HF loss.
因此，针对这种情况，提出高速MOSFET驱动器应具备的几点要求以及降低MOSFET高频开关损耗的几项措施。
Therefore, under the circumstances, several requirements and measures are proposed for high-speed MOSFET driver circuit and reducing MOSFET HF loss.
因此，针对这种情况，提出高速MOSFET驱动器应具备的几点要求以及降低MOSFET高频开关损耗的几项措施。
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