The present invention further relates to a deep sub-micron MOS integrated circuit die comprising a thick-oxide transistor-based preamplifier.
本发明还涉及一种深亚微米mos集成电路管芯，包括基于厚氧化物晶体管的前置放大器。
The present invention further relates to a deep sub-micron MOS integrated circuit die comprising a thick-oxide transistor-based preamplifier.
本发明还涉及一种深亚微米mos集成电路管芯，包括基于厚氧化物晶体管的前置放大器。
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