The effects of inhomogeneous strain on the band structure and te mode gain were studied for low dimensional quantum systems.
研究了非均匀应变对低维量子结构的能带和TE模光增益所产生的影响。
Unstrained layer induced is primarily used to enhance the polarization insensitive mode gain and improve the active region crystal quality.
厚的无应变层的引入主要是为了改善有源层晶体质量，获得大的偏振不灵敏模式增益。
Although small QW has smaller optical confinement factor and smaller ratio of carriers injected into QW, it can provide higher mode gain because of its smaller mixing between valence bands.
小阱宽的量子阱虽然光学限制因子和载流子注入比例都较小，但由于其价带耦合小于宽量子阱，从而具有高的模式增益，说明量子阱的能带结构对其光学特性有决定性的作用。
Although small QW has smaller optical confinement factor and smaller ratio of carriers injected into QW, it can provide higher mode gain because of its smaller mixing between valence bands.
小阱宽的量子阱虽然光学限制因子和载流子注入比例都较小，但由于其价带耦合小于宽量子阱，从而具有高的模式增益，说明量子阱的能带结构对其光学特性有决定性的作用。
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