The results of the imitation experiments show that the method of the compound control can be used to improve the control performance of the system temperature for MOCVD effectively.
仿真和实验表明，这种复合控制的方法能有效地改善金属有机化合物化学气相淀积系统温度的控制性能。
MOCVD is an abbreviation form for Metal Organic Chemical Vapor Deposition, which is a method used to grow material crystal on substrate via MOCVD device.
MOCVD是金属有机物化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。
The MOCVD system is specifically introduced, and the gas flow automatic control method based on the mass flow controller(MFC) and programmable logic controller(PLC) is studied and analyzed.
研究分析了基于质量流量控制器、可编程序控制器和触摸屏的自动控制系统气体流量自动控制方法。
It provides a new method to the MOCVD control system design, and it is good for further researched and developed of the MOCVD control system.
它为MOCVD控制系统的设计提供了新的思路和方法，为进一步研发MOCVD控制系统奠定了基础。
This method improves the automatic control level of MOCVD and ensures the repeatability and stability of the process, which significantly improves the level of the...
该方法提高了MOCVD系统的自动化控制水平，确保了工艺的重复性和稳定性，使得MOCVD系统气体流量控制水平有显著提高。
(MOCVD) is an advanced preparative technique. Coatings prepared by the method have many strongpoints such as high quality, good completeness and good controllability.
金属有机化学气相沉积法(MOCVD)是一种先进的涂层制备方法，采用此方法制备的涂层具有质量高、完整性好、厚度易于控制等优点。
This method improves the automatic control level of MOCVD and ensures the repeatability and stability of the process, makes MOCVD system gas...
该方法提高了MOCVD系统的自动化控制水平，确保了工艺的重复性和稳定性，使得MOCVD系统气体流量控制水平有显著提高。
A method of controlling growth the VCSEL material by MOCVD with the in-situ optical monitoring were presented.
利用MOCVD的原位监测控制生长垂直腔面发射激光器材料。
Ir films were prepared by metal-organic chemical vapor deposition (MOCVD) method using iridium tri-acetylacetonate precursors on molybdenum substrates.
以乙酰丙酮铱为前驱体，采用金属有机化合物化学气相沉积(MOCVD)技术在钼基体上制备了铱薄膜。
Ir films were prepared by metal-organic chemical vapor deposition (MOCVD) method using iridium tri-acetylacetonate precursors on molybdenum substrates.
以乙酰丙酮铱为前驱体，采用金属有机化合物化学气相沉积(MOCVD)技术在钼基体上制备了铱薄膜。
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