The basic principle and theoretic model of the detection are introduced. An auto detection system is built and a criterion of micro bulk defect is advanced.
介绍了检测的基本原理和理论模型，以及基于这一构想的全自动检测系统的实现方法，并提出了微缺陷检测的判据。
A detection method for obtaining the micro bulk defect size in semiconductive materials by analyzing near infrared laser scattering light distribution is presented.
提出了利用近红外激光散射光强分布分析来检测半导体材料内部微体缺陷的检测方法。
A detection method for obtaining the micro bulk defect size in semiconductive materials by analyzing near infrared laser scattering light distribution is presented.
提出了利用近红外激光散射光强分布分析来检测半导体材料内部微体缺陷的检测方法。
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