• The oxygen-sensitive characters of metal-oxide semiconductor oxygen sensor is re-ported.

    研究氧化物半导体敏元件的氧敏特性

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  • They studied the pressure dependence of electrical properties of metal-oxide semiconductor in a separate paper.

    他们篇文章中给出关于金属氧化物半导体电学特性压强依赖关系研究结果。

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  • The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.

    金属氧化物半导体效应晶体管(MOSFET)的作品一个类似的原则二极管MOSFET掩埋

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  • A method of manufacturing a metal oxide semiconductor (500).

    一种制造金属氧化物半导体方法(500)。

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  • A gate structure of the metal oxide semiconductor is etched (510).

    金属氧化物半导体栅极构造蚀刻(510)。

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  • The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.

    发明提出一种集成电路金属氧化物半导体元件判断电流方法

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  • The invention disclosed a metal oxide semiconductor element with voltage stabilization and electrostatic discharge protection and a manufacturing method thereof, which is applied to a chip.

    发明公开了稳压静电放电防护金属氧化物半导体元件及其制造方法应用于一芯片。

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  • Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.

    本发明提供了一种互补金属氧化物半导体CMOS装置及其制造方法

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  • The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.

    发明改善应变金属氧化物半导体器件制造刻蚀沟槽的微负载效应

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  • As so far, there are tow kinds of image sensors: Charge Couple Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS).

    作为到目前为止拖曳种类图象传感器充电夫妇设备(CCD)互补金属氧化物半导体(CMOS)。

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  • Therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.

    如此有效率地利用金属氧化物半导体无须另外制作电容,可节省芯片尺寸大小进而降低 成本。

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  • The oxygen - sensitive characters of metal - oxide semiconductor oxygensensor is re - ported.

    研究了一氧化物半导体元件特性

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  • A metal-oxide secondary emission film can be deposited on glass, ceramic or semiconductor substrates by thermal decomposition of an organo-metal alkoxide.

    利用某些有机烷氧基金属化合物热分解,玻璃金属陶瓷半导体基片上沉积相应的金属氧化物次级发射

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  • The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.

    肖特基二极管及其制造方法能够满足金属氧化物半导体工艺需求适用亚微米集成电路的集成生产

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  • High mobility P-channel power metal oxide semiconductor field effect transistors.

    迁移率的P -沟道功率金属氧化物半导体效应晶体管

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  • A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).

    半导体器件可以包括至少金属氧化物场效应晶体管(MOSFET)。

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  • Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.

    大多数基单电子晶体管制备方法可以好地主流的CMOS工艺兼容

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  • A complementary metal oxide semiconductor (CMOS) readout integrated circuit (ROIC) for the sensitive material of vanadium dioxide (VO_2) was introduced.

    介绍一种针对二氧化敏感材料CMOS读出电路(RO IC)。

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  • Ambipolar conduction is an essential and fundamental property in the application of the conventional inorganic complementary metal-oxide-semiconductor thin film transistors.

    传统互补式金氧半薄膜电晶体应用上,双极性传输基本重要特性

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  • The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;

    发明存储器供电结构包括电荷读出电压调节器一个去耦电容MOS晶体管;

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  • The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;

    发明存储器供电结构包括电荷读出电压调节器一个去耦电容MOS晶体管;

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