Physical parameters range from the temperature of CPUs, utilization of memory and file system, interface utilization, and voltage reading, among other physical values.
物理参数包括CPU温度、内存与文件系统利用情况、接口利用、电压读数，以及其他物理值。
Memory cell capacitance is the crucial parameter which determines the sensing signal voltage, speed, data retention times, endurance and against the soft error event.
记忆体电容是决定检测讯号电压、速度、资料保存时间、耐久性以及防止软性误差的重要参数。
Initialized which include: adjusted stack pointer, the need to use the internal data memory of the initialization, set up the boot nc power output voltage and CPU interruption of the set.
此中初始化包括：调解堆栈指针、需要使用的内部数据存储器的初始化、设置数控电源的开机输出电压以及CPU中断部分设置。
Li battery have the good features of small size, high power density, no memory effect, long cycle life, high voltage and low self-discharge.
锂电池具有体积小、能量密度高、无记忆效应、循环寿命高、高电压电池和自放电率低等优点。
The state of the memory element can thereby be detected by a voltage comparator sense amplifier that is connected to the bit line.
因此可通过连接到位线的电压比较器读出放大器来检测存储器元件的状态。
It is shown that the two states('0' and '1') of single-electron ring memory, which has a cyclic array of quantum dots, can be implemented by input voltage controlling the charges on the islands.
研究表明，单电子环形存储器单元电路利用量子点环状电路结构形式，由外接输入电压控制各岛上的电荷，能够得到存储器的“0”和“1”状态。
Another embodiment includes applying a lower program voltage to program memory cells of the last word line to select physical states.
另一实施例包括施加较低的编程电压，以将所述最末字线的存储器单元编程为选择物理状态。
VDDQ: The supply voltage to the output buffers of a memory chip.
对时钟来说是为内存输出缓存芯片提供电压。
During data loading operations, the memory elements may be powered with a power supply voltage equal to the programmable core logic power supply voltage.
在数据加载操作过程中，可以按与可编程核心逻辑电源电压相等的电源电压对存储器单元供电。
It consists of a digital controller, SRAM for display data memory, a DC-DC voltage converter, reference current generators, a pre-charge voltage generator, 64 common drivers, and 132 segment drivers.
芯片内部主要包括数字控制器，显示数据存取器，DC - DC电压转换器，参考电流产生器，电压预充电路产生器，64个行驱动电路和132个列驱动电路。
During normal operation the memory elements may be powered with a power supply voltage that is larger than the programmable core logic power supply voltage.
在正常操作过程中，可以按比可编程核心逻辑电源电压高的电源电压对存储器单元供电。
The voltage output is supplied to a load, for example, the word line of an EPROM memory circuit.
将电压输出供应到负载，例如EPROM存储器电路的字线。
The specific relationship between the data programmed into the memory element and the threshold voltage ranges of the element depends upon the data encoding scheme adopted for the memory elements.
编程到存储器元件中的数据与元件的阈值电压范围之间的具体关系取决于对存储器元件采用的数据编码方案。
Gigabyte motherboard out to test the voltage, CPU temperature, fan speed, hard disk usage, memory usage and easy to use software.
技嘉出的用来测试主板电压，CPU温度，风扇速度，硬盘使用率，和内存使用率好用的软件。
These major changes in voltage, core clock and memory clock can easily destabilize a card to a point where you get artifacting and even a lockup.
这些在电压、核心时脉和记忆体时脉的改变，容易造成显卡的不稳甚至当机。
High voltage system is used to generate high voltage for Flash Memory when programming and erasing.
高压发生系统用来为闪速存储器在编程和擦除操作时提供高压。
When the threshold voltage is negative and a read is attempted by applying 0 V to the control gate, the memory element will turn on to indicate logic one is being stored.
当阈值电压为负且通过向控制栅极施加0V来尝试读取时，存储器元件将接通以指示正在存储逻辑1。
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
The cell is programmed by rendering the memory cell very high-resistance, such that current no longer flows between the conductors on application of a read voltage.
通过使存储单元呈现非常高的电阻来对所述单元编程，使得当施加读取电压时在导体之间不再流过电流。
In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.
在非易失性存储装置中，可以通过将擦除电压施加到位线或共源线来从存储晶体管擦除数据。
The comparison logic compares a threshold voltage of a memory cell to at least one pair of fractional reference voltages to generate comparison results.
比较逻辑比较存储单元的阈值电压与至少一对分数参考电压，以生成比较结果。
For example, program voltage levels used in EPROM and flash memory circuits are higher than the voltages normally used in memory circuits.
举例来说，在EPROM和快闪存储器电路中使用的编程电压电平高于存储器电路中通常使用的电压。
The system select W78LE516 MCU and CPLD to construct the control circuit and use quickly read and write low power consumption, low-voltage external data memory CF card to save the signal.
系统选w 78le516单片机和CPLD来构造控制电路，用读写速度快、功耗低的低电压外部数据存储器CF卡存储采集完的信号。
Based on dynamic priority scheduling, dynamic voltage scaling algorithms for system level energy reduction based on the power model with processor and memory are proposed.
针对动态优先级节能调度研究存储器操作的系统级能耗优化问题。
Based on dynamic priority scheduling, dynamic voltage scaling algorithms for system level energy reduction based on the power model with processor and memory are proposed.
针对动态优先级节能调度研究存储器操作的系统级能耗优化问题。
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