It is shown that the two states('0' and '1') of single-electron ring memory, which has a cyclic array of quantum dots, can be implemented by input voltage controlling the charges on the islands.
研究表明，单电子环形存储器单元电路利用量子点环状电路结构形式，由外接输入电压控制各岛上的电荷，能够得到存储器的“0”和“1”状态。
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
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