A sense amplifier circuit for reading the state of memory cells.
本发明提供一种用于读取存储器单元的状态的读出放大器电路。
The doped semiconductor line is coupled to a row of memory cells.
掺杂半导体线连接至一行存储单元。
Physical addresses are used to address memory cells in memory chips.
物理地址是用来真正访问内存单元的地址。
The word line drivers drive word lines for the rows of memory cells.
所述字线驱动器驱动用于所述行存储器单元的字线。
Her name jarred his memory cells, but the context eluded him. "Welcome to Los Angeles.
这个名字触动了托尼的记忆细胞，但一时又想不起具体的线索：“欢迎来洛杉矶。
The gates and memory cells are constructed of simple digital electronic components.
而这些门和存储器位元是由简单的数字电子元件组成。
The memory array includes M rows and N columns of memory cells and a column of dummy cells.
所述存储器阵列包括M行和N列存储器单元以及列虚设单元。
In one possible design, transistors 100, 102, 104 and 106 are each memory cells or elements.
在一种可能的设计中，晶体管100、102、104和106每一者是存储器单元或元件。
The sense amplifiers detect bit lines for the columns of memory cells based on the enable signals.
所述读出放大器基于所述启用信号检测用于所述列存储器单元的位线。
In addition, a DVS technology is used reducing the leakage power in the TLB's memory cells by 90%.
此外，通过引入DVS技术将TLB存储单元中的漏电功耗减少90%以上。
Years of deep and shallow, that the traces of memory cells that can not be fixed, but also how to choose.
那些岁月中深深浅浅的痕迹，那些无法定格的记忆，又要如何取舍。
All modern operating systems, including Linux, use this kind of addresses to access the contents of memory cells.
在所有的现代操作系统中，系统都是使用虚地址去访问内存单元的。
A bit line on the insulating layer is electrically connected to a last one of the plurality of resistive memory cells.
位于绝缘层上的位线电连接到多个电阻存储器单元中的最后一个。
In addition, an element of data holding unit unit is included, and the data holding unit unit includes a plurality of memory cells.
此外，还包括数据保存单元元件，且该数据保存单元包括多个存储单元。
The main operators of the algorithm included hyper mutation, positive selection to produce memory cells and similar cell suppression.
算法的主要操作算子包括超变异、正选择、记忆细胞产生和抗体相似性抑制。
Another embodiment includes applying a lower program voltage to program memory cells of the last word line to select physical states.
另一实施例包括施加较低的编程电压，以将所述最末字线的存储器单元编程为选择物理状态。
The main operators of the algorithm include positive selection, memory cells producing, hyper-mutation and similar antibodies suppression.
算法的主要算子包括正选择、记忆细胞产生、超变异和抗体相似性抑制。
An array of charge trapping nonvolatile memory cells is arranged in several columns of cells, each arranged in a series, such as a NAND string.
一种电荷陷获非易失存储器单元的阵列，排列为多列单元，且每一列为串联安排，如NAND串。
One was a technique to lay down polysilicon so that each island of a single crystal is large enough to encompass many memory cells or transistors.
第一种技术是铺陈多晶矽的技术，这项技术使每一个单晶矽岛变得足够大，因而能包含更多的记忆胞或电晶体。
Memory cells were composed by half population with high affinity, and the half populations with low affinity in original generation were replaced.
选择亲和度高的一半细胞作为记忆细胞，利用其替换原始细胞群亲和度低的细胞。
To develop into memory cells, B cells have to survive the natural process of apoptosis, or programmed cell death, that occurs following a large immune response.
要发育成记忆细胞，B细胞必须在细胞凋亡或程序性细胞死亡这一自然过程中生存下来，细胞凋亡则随着明显的免疫响应而出现。
In this review, the classification, differentiation, formation and duration of memory cells, and also the possible target role for development vaccines will be presented.
本文着重描述了记忆性T细胞的分群、分化、形成和维持的一般规律及其在HIV疫苗研制中的意义。
The first four types—byte, short, int, and long—represent integers with different maximum and minimum values that reflect the capacity of the memory cells in which they are stored.
前四种类型——byte，short，int还有long代表了不同大小范围的数值，以此反映用来存储这些数值的内存单元的容量。
Memory cells are heterogeneous in phenotype and function. Understanding the properties of memory t cells will help in the design of vaccines and the immunotherapy for diseases.
深入研究机体记忆性T细胞的特征，不仅能指导新型疫苗的设计，而且可望帮助治疗疾病。
To implement a stack structure in a computer's memory, it is customary to reserve a block of contiguous memory cells large enough to accommodate the stack as it grows and shrinks.
为了在计算机的存储器中实现堆栈结构，习惯上保留一个足够大的连续的存储单元，以适应堆栈，因为它的生长和收缩。
The proposed structure circumvents this problem by creating non-volatile memory cells from standard CMOS transistors. Thus, no additional masking or processing steps are necessary.
这里提出的结构解决了这个问题，它利用标准CMOS晶体管来实现非易失性存储器，这样就不需要额外的掩膜或工艺步骤。
The digital portion may include a plurality of latch devices (361-364), and the analog portion may include a plurality of memory cells (321) and a plurality of selector devices (325).
所述数字部分可包含多个锁存器装置（361到364），且所述模拟部分可 包含多个存储单元（321）和多个选择器装置（325）。
The main operators of the algorithm included hyper-mutation, positive selection to produce memory cells and excellent sub-population, similar cell suppression, reorganization operator.
算法主要包括超变异、正选择、记忆抗体产生、优育抗体产生、细胞相似抑制、整理算子。
Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.
实施例包括个别存储单元、这种存储单元的阵列、操作所述存储单元或所述存储单元阵列的方法、以及其制造方法。
Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.
实施例包括个别存储单元、这种存储单元的阵列、操作所述存储单元或所述存储单元阵列的方法、以及其制造方法。
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