The invention also provides the preparation method of the magnetic semiconductor nano material.
本发明还提供了该磁半导体纳米材料的制备方法。
First-principles methods based upon density functional theory are performed for diluted magnetic semiconductor.
本文用密度泛函理论方法系统地研究了稀磁半导体材料。
Great attention has been paid on the study of diluted magnetic semiconductor, which has good magnetic properties.
高性能稀磁半导体材料的研究，日益成为科技界的热点。
The magnetic atoms doped are called magnetic impurities and the nonmagnetic semiconductor is called the based material.
其中被掺入的磁性原子称作磁性杂质，非磁半导体称作基质。
Electric transport property of oxide magnetic semiconductor film is only related to concentration of oxygen vacancy in material.
氧化物磁性半导体薄膜的电输 运性质只与材料中氧空位的浓度相关。
The existence mode of the nickel ion-doped cadmium oxide-based diluted magnetic semiconductor nano material is the nano powder and the nano film.
该镍离子掺杂的氧化镉基稀磁半导体纳米材料存在形态为纳米粉末和纳米薄膜。
The rapid development of spintronics and its usefulness in the field of electronic devices makes the magnetic semiconductor become a research hotspot.
自旋电子学的飞速发展及其在电子器件领域的实用性使得磁性半导体成为当前的研究热点。
The invention is a kind of manganese-doped silicon group magnetic semiconductor film material. The content of the manganese in the silicon is 1-10% mol ratio.
掺锰硅基磁性半导体薄膜材料，锰在硅中的含量为1-10％摩尔比的薄膜材料。
Diluted magnetic semiconductor, which has novel magneto-optical, magneto-electricity and magnetic transport properties has a great prospect in the fields of aviation and aerospace.
稀磁半导体材料具有磁光、磁电、磁输运等各种新颖的特性，使其在航空、航天等高科技领域中有着巨大的应用前景。
Compared with other magnetic sensors such as Hall elements, semiconductor magnetoresistance elements, the AMR sensors have advantages of high sensitivity, good temperature stability and small volume.
和其它磁场传感器如霍尔器件、半导体磁敏电阻相比，AMR传感器具有灵敏度高、温度稳定性好、体积小等优点。
The invention provides a polishing pad useful for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad.
本发明提供一种抛光垫，在抛光垫具有抛光媒质的情况下，用于抛光磁的、光学的和半导体衬底中至少一种。
The semiconductor memory device can reduce the writing current thereof without degrading the magnetic resistance value and thermal stability thereof.
本发明的半导体存储装置可降低其写入电流且不会劣化其磁阻值与热稳定性。
More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetic tunnel junction structure.
更具体，MT J结构可以在半导体衬底上，以及数字线可以邻近磁隧道结结构。
In this paper, the relationship between the time-dependent solutions and steady-state solutions of the semiconductor equations affected by magnetic field is considered.
本文考虑磁敏半导体方程瞬态解和稳态解之间的关系。
An electrical connection is provided to the metal layer and semiconductor layer and a magnetic field applier may be also provided.
给金属层和半导体层提供电连接，还可以提供磁场施加器。
A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line.
提供用于操作包括存储单元的磁随机存取存储器件的方法，该存储单元具有在衬底上的磁隧道结结构的。
A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line.
提供用于操作包括存储单元的磁随机存取存储器件的方法，该存储单元具有在衬底上的磁隧道结结构的。
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