Most of theoretical researches studied the quantum confinement effect on the luminescence of porous Si and Si nanocrystallites.
大部分理论计算研究的是量子限制对多孔硅和纳米硅晶发光的效应。
Rectification character, field emission character of porous silicon and effect of porous silicon on luminescence character of film luminescence material are studied, too.
同时对多孔硅的整流特性、场发射性质以及多孔硅衬底对薄膜发光材料发光性能的影响进行了研究。
The effect of the synthetic conditions on the relative luminescence intensity was discussed with orthogonal test.
同时，利用正交实验探讨了合成工艺条件对荧光粉相对发光强度的影响。
The doping ions with various valences were selected to verify the charge compensation effect on the luminescence intensity as K and al seem to have similar charge compensation effect.
选择不同价态补偿离子掺杂是为了研究电荷补偿作用机制对该类材料发光性能的作用。
Thermoluminescence and Optically stimulsted luminescence are dating techniques based on the radiation effect of crystals. The Progress, relationship and problems of both methods are reviewed.
扼要地评述了以晶体的辐射效应为基础的热释光测年和光释光测年两种测年技术方法的进展、关系以及问题。
The PL and EL spectra were recorded, which showed a-SiCx:H luminescence and DBR effect on the spectra.
结果显示了在光致和电致激发下非晶碳化硅的发光和DBR 对光谱的限制增强作用。
Due to the quantum size effect, semiconductor quantum dot nanocrystals can be used to adjust the wavelength of the luminescence center for broadband infrared emission.
半导体量子点可利用量子尺寸效应，具有可调节红外宽带发光中心波长等特点。
The intensity dependence of integrated luminescence on pump power shows that this is a third-order nonlinear optical effect.
荧光强度与激发光强度的三次方关系表明，有效的荧光产生起源于三阶非线性光学效应的增强。
The effect of the content of Cd on the temporal process of photoelectron, luminescence spectrum and thermo-luminescence were studied.
研究了Cd含量对电致发光亮度、发光光谱、光生电子瞬态过程和热释光的影响。
The effect of the content of Cd on the temporal process of photoelectron, luminescence spectrum and thermo-luminescence were studied.
研究了Cd含量对电致发光亮度、发光光谱、光生电子瞬态过程和热释光的影响。
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