Low power, low voltage and high PSRR are the main challenges in designing bandgap reference for switching regulator.
微功耗、低工作电压、高电源抑制比是在电源芯片中的基准源设计过程中遇到的主要挑战。
A low power CMOS bandgap voltage reference source with a start-up circuit is presented based on the bandgap voltage theory.
运用带隙基准的原理，提出了一种带启动电路的低功耗带隙基准电压源电路。
A low voltage current mode bandgap voltage reference circuit with a novel start-up circuit is designed.
介绍了一种低压电流模带隙电压基准电路，并提出了一种新颖的启动电路结构。
The influence of degree of disorder D and contrast of high and low refractive indices to the photonic bandgap are also calculated and discussed.
论文还计算和讨论了无序度和高低折射率之差值对光子晶体带隙的影响。
A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented.
本文提出了低温区高精度的禁带宽度的表达式，获得了低温区本征载流子浓度的简明公式。
The schematics includes four parts: bandgap reference voltage and reference current, 2.7V and 1.8V regulator, over-load protection , Low Battery Detection (LBD) .
其原理包括参考电压电流电路，2.7V及1.8V电压调整电路，过流保护电路以及低压检测电路四个部分。
CMOS bandgap voltage reference with low voltage based on the bulk driven technology is designed in this paper, with circuit to improve PSRR and start-up circuit.
通过对低压低功耗集成电路设计技术的分析，着重设计了一个基于衬底驱动技术的CMOS带隙基准电压源，其带有提高电源抑制比电路和启动电路。
It remedies the weakness of low transport properties in wide bandgap semiconductors, based on these properties high power HFETs have been fabricated.
它弥补了宽禁带半导体输运性能差的缺点，已研制成大功率的HFET。
Low voltage curvature corrected bandgap references are designed.
研究了低压曲率校正带隙基准源设计技术。
A CMOS bandgap voltage reference with low voltage based on the bulk driven technology is designed in this paper, with circuit to improve PSRR and start-up circuit.
通过对低压低功耗集成电路设计技术的分析，着重设计了一个基于衬底驱动技术的CMOS带隙基准电压源，其带有提高电源抑制比电路和启动电路。
Based on the basic principle of bandgap reference, design a high precision, high power supply rejection ratio (PSRR) and low temperature coefficient (TC) bandgap voltage reference.
基于带隙基准的基本原理，设计了一种高精度、高电源抑制比(PSRR)、低温度系数(TC)的带隙基准电压源。
A low voltage bandgap reference for a novel uncooled IRFPA readout circuit is presented.
设计了一种用于新型非制冷irfpa读出电路的低温漂的低压带隙基准电路。
Selenide glasses have low material dispersion, high-energy bandgap, long-wavelength multiphonon edge and it's the perfect candidate for mid-far-infrared fibers.
硒化物玻璃具有低的材料色散、高的禁带宽度、长的多声子吸收边，是制备中远红外光纤的优秀材料。
Selenide glasses have low material dispersion, high-energy bandgap, long-wavelength multiphonon edge and it's the perfect candidate for mid-far-infrared fibers.
硒化物玻璃具有低的材料色散、高的禁带宽度、长的多声子吸收边，是制备中远红外光纤的优秀材料。
应用推荐