The results show potential application of oxygen-deficient LCMO thin films in optoelectronic devices.
实验显示出缺氧钙钛矿薄膜在光电器件上的巨大应用潜力。
X-ray diffraction and transmission electron microscopy establish that LCCO grew epitaxially inc-axis orientation on LCMO.
使用X射线衍射和透射电镜分析，表明异质结是c轴取向外延生长。
The influence of oxygen deficiency on the optical response of LCMO thin films in metallic and insulating state has been analyzed.
分析了在金属态和绝缘态时，缺氧对LCMO薄膜光响应的不同影响。
These results imply that the magnetic spin interaction between the two LCMO layers may exist through the normal-conductive YBCO layer.
结果表明，当YBCO处于正常态时两层LCMO膜之间存在着磁性自旋相互作用。
In contrast to that for LCMO films, the metal-semiconductor transition temperature (TMS) for LCMO/YBCO/LCMO films is enhanced and strongly depends on the YBCO layer thickness.
与LCMO单层膜相比，三层薄膜的金属半导体转变温度（TMS）被提高并且强烈依赖于YBCO层的厚度。
In contrast to that for LCMO films, the metal-semiconductor transition temperature (TMS) for LCMO/YBCO/LCMO films is enhanced and strongly depends on the YBCO layer thickness.
与LCMO单层膜相比，三层薄膜的金属半导体转变温度（TMS）被提高并且强烈依赖于YBCO层的厚度。
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