• Super capacitors or "electric double layer capacitors" store charge in a layer of ions adsorbed on the surface of carbon.

    电容器或者双电介质电容器”通过吸附表面离子储存电量

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  • In partially depleted SOI, the top layer is between 50- to 90-nm thick. Silicon under the channel is partially depleted of mobile charge.

    部分耗尽SOI结构中,SOI中顶层厚度50-90nm,因此沟道下方的硅层中仅有部分被耗尽层占据,由此可导致电荷在耗尽层以下电中性区域中累积,造成所谓的浮体效应。

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  • A separate layer of sensing lines detects changes in the electrical charge when you place your finger on the screen.

    感应线路用以手指置于屏幕上时监测电量改变

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  • The acidic pH interacts with the hair's slightly negative charge to help the cuticle, the outer layer of the hair, maintain a smooth, flat surface.

    酸性PH头发微量负电荷相互作用,以此帮助皮,即头发表面的一保持表面光滑平整

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  • Based on the Numbers of layer charge of phyllosilicate with expansive layers (PSEL), expansive layers are classified as montmorillonite layers and vermiculite layers.

    依据膨胀性层层状硅酸盐矿物(PSEL)电荷大小把膨胀性晶层分为蒙皂石晶石晶层两类。

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  • The electrical potential, field and carrier density in emission layer of single layer organic light-emitting devices are numerically studied based on the trapped charge limited conduction theory.

    以陷阱电荷限制传导理论为基础数值方法研究了单层机电致发光器件发光电势电场载流子密度的空间分布。

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  • The space charge layer formed during point discharge process is not enough to prevent the leader from marching, and can not prevent the forming of upward leader, either.

    人工尖端放电形成空间电荷不足以阻止先导的继续推进不能防止产生上行先导。

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  • Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.

    电荷存储具有半导体衬底氧化物、薄氧化物层上氮化物层和氮化物层上的绝缘氧化物层。

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  • It emphasizes the research importance of the layer charge in the modification process of the montmorillonite.

    指出了在石改性工艺中,研究蒙脱石电荷重要性

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  • The third layer is application layer which is in charge of transform the users' demand to invoke the interface of function layers.

    第三应用层负责用户应用转化为对功能组件标准接口调用实现。

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  • The improvement of tandem device performance is attributed to the efficient electron and hole injection from charge generation layer to two adjacent emission units.

    叠层发光器件性能提高与中间电荷产生上下两个发光单元有效电子空穴注入有关。

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  • The electrolyte USES a eutectic mixture in combination with an additive reduced in advance of the eutectic mixture upon the initial charge to form a solid electrolyte interface (SEI) layer.

    所述电解质将低混合物初始充电时先于低共熔混合物被还原从而形成固态电解质界面(SEI)层添加剂结合使用

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  • As the method does not make depletion approximation nor ignores the influence of inversion layer charge on electric potential, it is thus exact.

    这种方法采用耗尽近似也不忽略电荷电势影响因而精确的。

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  • I was one year short of the holiday, I did not do the project leaderlayer upon layer upon layer of reasons, let me do charge cards aside.

    正在短暂假期中,我已经不是项目领导人……层层叠叠理由事情搁在一边

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  • Inner- and outer-sphere surface complexes of all such three cations with tetrahedral and octahedral charge sites were observed in the one-layer hydrates.

    一层水合物可以观察到三种阳离子都能四面体电荷电荷位置分别形成、外配位作用。

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  • A charge transport layer of an organic light emitting diode contains the conducting polymer and the reactant of the unsaturated compound.

    一种有机发光二极管,其电荷输送中含有导电性聚合物不饱和化合物反应物

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  • The adsorbed dodecylamine film changed the structure of the double-electric layer and made the potential of zero charge(PZC) shift to the positive direction.

    十二胺吸附改变了电极表面双电结构使电荷电位正移。

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  • Because of the difference of DC voltage across it, it maintains its charge which in turn maintains its dielectric layer. And this is the key that answers the long burn-in question.

    由于电压穿过电容,电容能维持充电特性从而维持其电介质就是回答机问题关键所在。

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  • The area occupied by the monovalent exchange cation in the lattice layer of the montmorillonite and the determination ways of layer charge are presented. The different ways are compared.

    蒙脱石晶单价交换阳离子所占据面积电荷确定方法,并不同种方法进行了比较。

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  • The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.

    设计了一种新型存储器结构单元———/双层量子点阵列浮栅结构纳米存储器。

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  • The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.

    设计了一种新型存储器结构单元———/双层量子点阵列浮栅结构纳米存储器。

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