A lateral DMOS device having a structure that prevents breakdown of a semiconductor device while enhancing the breakdown voltage property.
一种横向dmos器件，具有防止半导体器件击穿同时增强击穿电压性能的结构。
Based on the transport mechanism of the single ion radiate plasma, the transient response model of single ion radiate the lateral high-voltage DMOS is proposed.
基于单粒子辐照的等离子体输运机理，提出了横向高压dmos单粒子辐照的瞬态响应模型。
Based on the transport mechanism of the single ion radiate plasma, the transient response model of single ion radiate the lateral high-voltage DMOS is proposed.
基于单粒子辐照的等离子体输运机理，提出了横向高压dmos单粒子辐照的瞬态响应模型。
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