The triggering voltage can be improved by up to one order of magnitude. This conclusion is proved in practical static latch up test.
这种保护结构可以将闩锁的触发电压提高一个数量级，在实际的闩锁静态测试中得到验证。
Controlled hole injection LIGBT (CI LIGBT) is proposed in the paper, which can effectively control the hole injection with high anode voltage, and its latch up free characteristics can be improved.
本文提出空穴注入控制型横向绝缘栅双极晶体管(CILIGBT)，可有效控制高压下阳极区空穴注入，提高器件的抗闩锁性能。
In power IC, crosstalk between high voltage power devices and low voltage devices can cause circuit operation failure and even latch-up.
在功率集成电路中，高压功率器件会对周围的低压电路产生串扰，从而造成电路失效甚至闭锁等现象。
Transient gamma irradiation experiment on "Qiangguang I" indicates that a latch-up window appears in the test circuit as predicated.
“强光i”瞬时伽马辐照实验显示，实验电路像预计的那样出现了闭锁窗口。
Based on this, a "three-path" latch-up model is developed to explain the window phenomena.
在此基础上，提出了解释窗口现象的“三径”闭锁模型。
Some data sheets contain electrostatic discharge or latch-up TEST results and the associated JEDEC TEST conditions.
有的数据手册还包括静电或闩锁测试结果以及对应的JEDEC测试条件。
At the same time, to prevent the generation of latch-up, guard rings are added around the large dimension digital output inverter PMOS and NMOS transistors of the circuits.
同时，为了防止闩锁效应的产生，在电路的大尺寸数字输出反相器的PMOS管和NMOS管的周围增加了保护环。
It is also indicated, based on analysis, that the latch-up may be avoided if CMOS circuits work in safe section, and it can be realized by taking all kinds of measures, such as adjusting the layout...
通过分析表明，只要让CMOS电路工作在安全区，闩锁效应是可以避免的，这可以通过版图设计规则和工艺技术，或者两者相结合的各种措施来实现。
It is also indicated, based on analysis, that the latch-up may be avoided if CMOS circuits work in safe section, and it can be realized by taking all kinds of measures, such as adjusting the layout...
通过分析表明，只要让CMOS电路工作在安全区，闩锁效应是可以避免的，这可以通过版图设计规则和工艺技术，或者两者相结合的各种措施来实现。
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