Since pure radioactive ion beam can be implanted into material directly, research on solid physics especially on impurity and defect in semiconductor become possible.
由于可以将纯净放射性核束注入到样品中去，使得其在固态物理特别是涉及到半导体中的杂质和缺陷问题的应用成为可能。
Since pure radioactive ion beam can be implanted into material directly, research on solid physics especially on impurity and defect in semiconductor become possible.
由于可以将纯净放射性核束注入到样品中去，使得其在固态物理特别是涉及到半导体中的杂质和缺陷问题的应用成为可能。
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