Photoresist grating was fabricated by holography, and it was used in the mask of ion etching.
采用全息法制备了光刻胶光栅，并用该光栅掩膜离子蚀刻。
The thickness of absorbed films was measured for three CWM dispersants by X-rayphotoelectric spectrometer and argon-ion etching in this report.
本文采用X光电子能谱加氩离子刻蚀法，测出三种分散剂在煤表面吸附膜的近似厚度。
This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.
加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。
The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).
利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。
The authors think that the high temperature on polymer local surface produced by ion bombardment is the main cause of artifacts on sample surface treated by ion-etching.
本文作者认为等离子体轰击高聚物表面引起的局部高温是离子刻蚀后试样表面出现伪迹的重要原因。
The authors think that the high temperature on polymer local surface produced by ion bombardment is the main cause of artifacts on sample surface treated by ion-etching.
本文作者认为等离子体轰击高聚物表面引起的局部高温是离子刻蚀后试样表面出现伪迹的重要原因。
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