A backside growth technique of thick porous silicon layers for the on-chip RF integrated inductor is presented.
介绍了一种用于高品质射频集成电感的厚膜多孔硅背向生长技术。
An interconnection structure is formed through the buried insulating layer to connect the integrated inductor to the integrated circuit.
形成穿过掩埋绝缘层的互连结构，以连接集成电感器和集成电路。
Coplanar transmission lines and integrated inductors are fabricated on different SOI substrates with standard CMOS processes. The attenuation mechanism of the CPW and inductor is analyzed.
采用标准CMOS工艺在不同soi衬底上制备了微带和微带集成电感器件，分析了CPW和集成电感的损耗机制。
Planar spiral inductor is the most important passive component of CMOS RF integrated circuit design.
平面螺旋电感是射频电路设计中最重要的无源元件。
An inductor used in a radio frequency integrated circuit is disclosed.
本发明公开了一种用于射频集成电路的电感器。
An inductor used in a radio frequency integrated circuit is disclosed.
本发明公开了一种用于射频集成电路的电感器。
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