• The coupling capacitor is on the insulating substrate.

    耦合电容器电连接到开关元件。

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  • The gate and data lines may be formed on the insulating substrate.

    栅极线和数据线可以形成于绝缘衬底上。

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  • The element employs a bifilar wound wire grid on an insulating substrate.

    元件系用双股绕线网缠绕在一块绝缘基板上。

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  • The element employs a bifilar wound wire grid on an insulating substrate .

    元件系用双股绕线网缠绕在一块绝缘基板上。

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  • The annular insulating substrate includes an annular inner edge, an annular outer edge and a first surface.

    环状绝缘基板具有一环状内缘、一环状外缘及一第一表面。

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  • A way to circumvent the problem is to fabricate devices in small islands of silicon on an insulating substrate as shown in Fig. 32.

    消除这个问题的一个方法是把器件制造在绝缘衬底的硅岛上,如图32所示。

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  • The switching element may be formed on the insulating substrate in a pixel region defined by gate and data lines adjacent to each other.

    开关元件可以形成于像素区域中的绝缘衬底上,像素区域由彼此相邻的栅极线和数据线限定。

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  • The equivalent circuit model gives the instantaneous relationship between the sheath thickness and the surface potential at an insulating substrate placed on the pulse-biased electrode.

    模型包括离子连续性方程、动量方程和泊松方程,特别是提出了可以自洽地决定绝缘基板表面电势、表面电荷密度和鞘层厚度关系的等效电路方程。

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  • The invention relates to a film-type thermoelectric conversion assembly, which comprises at least one annular insulating substrate and a plurality group of thermoelectric film materials.

    本发明一种薄膜式热电转换组件,至少包括一环状绝缘基板和多组热电薄膜材料。

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  • A first insulating layer is on the substrate, and a second insulating layer is on the first insulating layer.

    第一绝缘层位于衬底上,以及第二绝缘层位于第一绝缘层上。

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  • Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.

    左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。

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  • The insulating layer thermal conductivity value of table1 is calculated by the Al-Substrate CCL thermal resistance value.

    表1中绝缘层热导率是由铝基板热阻值推算所得。

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  • Among them, the active component on the substrate has an insulating layer.

    其中,位于基板上的主动元件具有一绝缘层。

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  • The Microcup pattern with insulating material was made on metal substrate and the mould was obtained with follow-up process.

    即通过在金属基材上形成选择性的导电与不导电图形,来制作深纹的“微杯”金属模具。

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  • A semiconductor device may include a semiconductor substrate, one common gate electrode, and one gate insulating layer.

    该半导体器件的一种包括半导体衬底、公共栅极电极和栅极绝缘层。

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  • The silicon wafer comprises a silicon substrate, an insulating layer, at least one electric element and at least one perforating hole.

    该硅晶片包括硅基材、绝缘层、至少一电性元件及至少一穿导孔。

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  • The insulating layer is positioned on a first surface of the silicon substrate.

    该绝缘层位于该硅基材的第一表面。

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  • The solar cell includes N-type crystalline silicon particles (01), aluminum substrate (02), middle insulating layer (05), surface transparent conductive layer (06) and antireflection layer (07).

    包括N型体晶硅体颗粒(01),铝衬底 (02),中间绝缘层(05),表面透明导电层(06)和减反射层(07)构成。

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  • Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.

    由此,能获得其中翘曲较少且较不可能发生破裂的半绝缘氮化物半导体晶体衬底。

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  • Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.

    由此,能获得其中翘曲较少且较不可能发生破裂的半绝缘氮化物半导体晶体衬底。

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