The damage morphology of InSb is proved to be ablation, but no cleavage burst appears. It is in accordance with practice.
研究发现其破坏形态为熔融破坏，一般不会出现解理或炸裂现象，这一结果与相关实验报道一致。
An integrating amplifier working together with the infrared detectors with high impedance, for example InSb (pv), will be here introduced.
本文介绍一种与高阻红外探测器相匹配的积分放大器，用来读出探测器的输出信号。
To obtain high quality InSb crystals, a precision diameter-constant control technology is required in the growth process of large size InSb crystals.
为了获得高质量的晶体，需要解决大尺寸锑化铟晶体生长过程中的精确等径控制问题。
The changes of volume, band structures, electronic density of states and charge density contour plots for lithium intercalation in InSb are also discussed.
讨论了锂嵌入时的体积变化、能带结构、电子态密度以及电荷分布等性质。
Surface damage caused by cutting on Si, InSb, HgCdTe has been studied by Reflection High Energy Electron Diffraction (RHEED) after step-etching the samples.
利用高能反射电子衍射技术（RHEED），研究了硅、锑化铟、碲镉汞样品逐次化学腐蚀后的切割表面损伤。
InSb was used as Hall-element to measure magneto induction as well as used as magneto-sensitive to study the variety rule of its resistant when the magneto field was changed.
锑化铟既作霍尔元件测量了磁感应强度，又作磁敏电阻研究了其阻值随磁场的变化规律。
The temperature rise and output signal of PV InSb detector illuminated by CW laser were calculated with one dimensional thermal model and the experimental result was analyzed.
理论上用一维热模型计算了探测器在激光辐照过程中温升和输出信号的变化过程，对实验结果进行了分析。
An InSb infrared focal plane array (IRFPA) detector is required to operate in the temperature range from room temperature to 77k for several thousand times in its lifetime period.
锑化铟红外焦平面探测器将要在寿命周期中于室温到77K的温度范围内工作几千次。
An InSb infrared focal plane array (IRFPA) detector is required to operate in the temperature range from room temperature to 77k for several thousand times in its lifetime period.
锑化铟红外焦平面探测器将要在寿命周期中于室温到77K的温度范围内工作几千次。
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