Edit the input file edi2adf. inp to modify the Sender and Receiver IDs as shown in Scenario 1, Figure 7.
编辑输入文件edi2adf .inp，修改Sender和ReceiverIDs，如图7中的场景1所示。
The microstructures of INP latex films were characterized by IR and transmission electron microscopy (TEM).
以红外光谱、透射电子显微镜表征互穿共聚物乳胶膜的微观结构。
Results: Group B was significant superior to group A in the postoperated fever, chilling rate, use of antibiotics and inp…
结论：局部腹腔内冲洗在合并有腹腔脓液的阑尾手术中应用较未冲洗组效果优越。
It is found that pore's depth and diameter on n-InP with heavily doped concentration is larger than moderately doped samples.
本文通过对不同掺杂浓度的样品进行刻蚀，发现重掺杂的样品刻蚀出的孔在深度和孔径上都比中度掺杂的大。
Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
The results indicate that a stable and suitable thermal field, the transparence of B_2O_3, doping quantity are important conditions for growth of twin-free InP crystal.
实验证明，建立一个稳定合适的热场、保持b_2o_3的透明度、控制好掺杂量等是减少孪晶的必要条件。
The Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.
方形光二极管阵列包括四个集成在通用磷化铟（InP）衬底上的光二极管单片集成电路，采用低制造、集成与测试率的铟镓砷化物/磷化铟半导体工艺制造。
The Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.
方形光二极管阵列包括四个集成在通用磷化铟（InP）衬底上的光二极管单片集成电路，采用低制造、集成与测试率的铟镓砷化物/磷化铟半导体工艺制造。
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