When the injected electrons find the lower-energy state occupied, they spill over into the other state; realigned with their holes, they release their extra energy as photons.
当注入的电子找到已经被占据的更低能级，他们就会溢出，进入其他状态：和它们的凹陷重新组合，并且以光子的形式释放多余能量。
Electrons are injected into the higher upper state via resonant tunneling from the previous injector.
电子通过之前注入器的谐振隧道注入到更高的能态。
Electrons and holes injected into the polymer film form bound states called excitons that break down under electrical current, emitting light as they do so.
电子和空穴注入高分子膜所形成的界态称为电子空穴对，电子空穴对冲破电流的阻碍，于是便产生了光。
Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
通过在与浮栅电容耦合的第二杂质扩散层上施加高电压对浮栅注入电子。
The results show that the limiting factor in thin gate oxides breakdown depends on the balance between the amount of injected hot electrons and holes.
研究结果表明薄栅氧化层击穿的限制因素依赖于注入热电子量和空穴量的平衡。
Charge to breakdown of the thin gate oxides was tested and investigated by controlling the amounts of injected hot electrons and holes separately with substrate hot holes injection method.
利用衬底热空穴注入技术分别控制注入到薄栅氧化层中的热电子和空穴量，对相关击穿电荷进行了测试和研究。
The results show that the limiting factor for thin gate oxides depends on the balance between the amounts of injected hot electrons and holes.
结果表明薄栅氧化层击穿的限制因素依赖于注入热电子量和空穴量的平衡。
Experiments show that, with this structure, more electrons are injected into the SiO2 under a low electric field.
试验证明，该样品在较低的电场强度下有较大的电子流注入二氧化硅绝缘层。
Experiments show that, with this structure, more electrons are injected into the SiO2 under a low electric field.
试验证明，该样品在较低的电场强度下有较大的电子流注入二氧化硅绝缘层。
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