The most effective material for thin-film photovoltaics so far is copper indium gallium selenide (known as CIGS).
目前为止，光电薄膜最有效的材质是铜铟硒化镓（CIGS）。
Photovoltaic cells rely on amorphous or crystalline silicon, cadmium telluride, or copper indium selenide and sulfide.
光伏电池依赖于非晶态或晶态的硅，碲化镉或者硒化、硫化铜铟。
Other companies, notably Heliovolt and Nanosolar, are in a race to make thin-film panels using copper indium gallium selenide (CIGS) cells.
其它一些公司，诸如heliovolt以及Nanosolar，也在用铜铟镓硒(CIGS)电池来参与这场薄膜电池竞赛。
Most touch screens in phones are now made with indium tin oxides (ITO). The ITO's greatest asset is that it's transparent, but it comes with a cost.
大多数的手机触屏是由铟锡氧化物(ito)制成的，铟锡氧化物的最大优点是它是透明的，但它也很昂贵。
The dots, composed of a semiconductor called indium phosphide, are sprayed onto a transparent plastic sheet that is then covered with a second sheet.
这些微晶是一种叫作磷化铟的半导体化合物，它们被喷撒在一张透明塑料薄片上，然后用另一张薄片盖好。
Zhuzhou Hemao Trade Co. , Ltd Specializing in indium ingot.
株洲和茂专业生产铟锭，铟珠，精铟，价格有竞争力！
A synthesis method of indium tris acetylacetonate is introduced.
报道了乙酰丙酮铟的合成方法。
The behavior of tin ion in electrolytic refining of indium was described.
研究了铟的电解精炼中锡离子的行为。
The volatilizing rates of indium and zinc reach 97% and 95%, respectively.
在此条件下，铟和锌的挥发率分别达到97%和95%。
The technologies will open up some new approaches for the separation of indium.
这些新技术为分离回收铟提供了新的选择。
Of course there can be alloy compositions that contain bismuth, indium, and zinc.
当然，合金成分可以包含铋、铟和锌。
The effective separation of indium can be obtained under properly -controlled conditions.
在合适的条件下，运用这些技术可对铟进行有效地分离回收。
The influencing factors on the surface activation layers during indium seal are also analyzed.
进一步分析了铟封过程中影响阴极表面激活层的因素。
The indium sesquioxide with over 99% purity can be prepared by a decomposition of nitric acid.
采用硝酸分解法可制取纯度高于99%的三氧化二铟。
This paper explores the enrichment law and mechanism of indium in the main steps of KIVCET process.
探讨了铟在基夫·塞特直接炼铅工艺主要工序中的富集规律和机理。
Resource, production, application and indium market trend in main countries producing indium were discussed.
论述了世界生产铟的主要国家的资源、生产、应用和铟市场走势。
The technology for indium recovery becomes more and more important with the steady increase of indium demand.
随着铟需求量的稳定增长，铟的回收技术越来越受到重视。
With these characteristics, indium could play an important role like mercury in alkaline zinc manganese battery.
铟的这些特性使其在碱性锌锰电池中较好地起到代汞的作用。
Usage: it can be used in the alloys, special weld materials, painting, electronic industry and high purity indium.
用途：可用于制造合金，特殊焊接材料，涂层，电子工业和高纯铟的生产。
A further discussion is made of how to improve the technology to increase indium residue's grade and indium recovery.
就如何改进生产工艺，以提高铟渣品位及铟回收率作了较深入地探讨。
The design principles of indium tin oxide film (ITO) applied to antistatic for optical solar reflector (OSR) have been studied.
对氧化铟锡(ito)薄膜在光学太阳反射镜(osr)抗静电放电设计中的应用进行了研究。
The recovery mechanisms and parameters are introduced. Mass fraction of indium, copper and silver in obtained metals is over 99.99%.
介绍了铟、铜、银分别回收的原理及技术参数，所得金属中铟、铜、银质量分数均大于99.99%。
In this paper, the practice of producing nanometer zincite and concentrating indium from the dust of smelting lead was introduced in detail.
文章详细介绍了利用铅冶炼烟尘生产纳米氧化锌并富集铟的生产实践。
Acetalization and ketalization reactions catalyzed by indium trichloride using various ionic liquids as media have been investigated in detail.
以离子液体为介质研究了三氯化铟催化的缩醛与缩酮反应。
The result shows that indium particles in evaporated film can be removed by annealing and leads the increase transparency of the film obviously.
结合电镜观测，表明蒸发膜中的金属铟粒经退火后基本消除，薄膜透射率明显提高。
Zinc oxide thin films were prepared by pulsed laser deposition (PLD) on glass substrates coated with tin-doped indium oxide (ITO) thin films in this paper.
本文采用射频辅助脉冲激光沉积(PLD)系统，在镀有透明导电膜氧化锡铟(ito)的玻璃衬底上制备了氧化锌薄膜。
Modern LED makers accomplish this by using precise ratios of indium, gallium, aluminum, and nitrogen for the crystal layer, which results in a bluish color.
现代的LED生产商通过精确的控制铟，镓，铝和氮在晶体层中的比例，来制造蓝色的光亮。
Because molybdenum participated in atomization reaction of gallium, indium and thallium, it can change atomization mechanism and improve atomization efficiency.
由于钼元素参与镓、铟和铊的原子化反应，从而改变了原子化机理，提高了原子化效率。
It deduces the formula of variation of fixed thermal capacity and elastic modulus with temperature and pressure based on the actual calculation of crystal indium.
对铟晶体作具体计算，得到了定容热容量和弹性模量随温度、压强的变化关系式。
It deduces the formula of variation of fixed thermal capacity and elastic modulus with temperature and pressure based on the actual calculation of crystal indium.
对铟晶体作具体计算，得到了定容热容量和弹性模量随温度、压强的变化关系式。
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