This method has been successfully applied to the measurements of impurity compensation and carrier mobility on high resistivity silicon materials.
本方法已成功地用于高阻硅材料杂质补偿度和载流子迁移率的测量。
To reduce the content of structure defect and impurity is also an effect way to raise the resistivity of the films.
结构缺陷和杂质含量较小的金刚石膜具有较高的电阻率。
To reduce the content of structure defect and impurity is also an effect way to raise the resistivity of the films.
结构缺陷和杂质含量较小的金刚石膜具有较高的电阻率。
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