A polycide layer is defined over the impurity doped polysilicon layer. The polycide layer and the polysilicon layer function as a word line.
多晶硅化金属层设置于杂质掺杂多晶硅层上，而多晶硅化金属层与多晶硅层可作为字线。
The influences of oxygen impurity influx rate and confinement time on intensity and switch-on time of line emissions are surveyed numerically.
用数值计算分别考察了氧杂质进入通量和约束时间对谱线峰值强度和起始时间的影响。
The impurity diffused region (20) is connected to a bit line (BL).
杂质扩散区（20）与位线（BL）连接。
The impurity diffused region (20) is connected to a bit line (BL).
杂质扩散区（20）与位线（BL）连接。
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