The paper firstly presents the structure of IGCT test bench and its two cabinets for high-voltage producing and test circuit.
文章首先讲述了IGCT测试台的结构组成，分别设计了用于高压产生和高压测试的两个机柜。
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
The paper introduces the performance parameters and the fundamental principle of gate drive circuit, and compares the features of IGCT, GTO and IGBT.
论文介绍了IGCT器件性能参数、门极驱动电路的基本工作原理，对IGCT、GTO和IGBT的特点进行了对比。
For IGCT or GTO, the overcurrent protection is generally implemented in the main circuit, which brings complex main circuit, high cost and great volume.
IGCT或者GTO的过电流保护一般在主电路中实现，使主电路复杂、成本高、体积大。
First developed by ABB Company, IGCT ( Integrated Gate Commutated Thyristor)is a new sort of power semiconductor, which integrates its gate device with the thyristor.
集成门极换流晶闸管IGCT是一种新型的电力电子器件，是将门极驱动电路和门极换流晶闸管GCT集成于一体的器件。
Relationship between the main parameters and commutation time is analyzed, based on which, switch-off process after the commutation is described and IGCT commutation mechanism is illustrated.
分析了主要参量与换流时间的关系，在此基础上，描述换流后的关断过程，阐明IGCT的换流机理。
Relationship between the main parameters and commutation time is analyzed, based on which, switch-off process after the commutation is described and IGCT commutation mechanism is illustrated.
分析了主要参量与换流时间的关系，在此基础上，描述换流后的关断过程，阐明IGCT的换流机理。
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