Then, the influence of deep-submicron technology on IDDQ testing is explained. And the improved IDDQ testing methods are also given.
分析了深亚微米技术对IDDQ测试的影响以及IDDQ的改进方法。
Due to the diversity of the faults and manufacturing defects in CMOS IC, some of the faults can neither be defected by voltage test nor by IDDQ test.
由于CMOS集成电路中的故障和制造缺陷是多种多样的，其中有些故障既不能被电压测试也不能被稳态电流测试方法检测出来。
Due to the diversity of the faults and manufacturing defects in CMOS IC, some of the faults can neither be defected by voltage test nor by IDDQ test.
由于CMOS集成电路中的故障和制造缺陷是多种多样的，其中有些故障既不能被电压测试也不能被稳态电流测试方法检测出来。
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